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2SK2425-E

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size73KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2425-E Overview

Silicon N Channel MOS FET

2SK2425-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeTO-220CFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codePRSS0003AE-A3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2425
Silicon N Channel MOS FET
REJ03G1012-0200
(Previous: ADE-208-1360)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter.
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
G
1. Gate
2. Drain
3. Source
12
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6

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