2SK2554
Silicon N Channel MOS FET
REJ03G1016-0600
(Previous: ADE-208-359D)
Rev.6.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
R
DS(on)
= 4.5 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
3
Rev.6.00 Sep 07, 2005 page 1 of 7
2SK2554
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
*
2
I
AP
*
3
E
AR
*
3
Pch*
2
Tch
Tstg
Ratings
60
±20
75
300
75
50
214
150
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note:
4. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.5
5.8
80
7700
4100
760
60
420
1200
900
0.95
105
Max
—
—
±10
100
2.0
6
10
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 40 A, V
GS
= 10 V*
4
I
D
= 40 A, V
GS
= 4 V*
4
I
D
= 40 A, V
DS
= 10 V*
4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 40 A, V
GS
= 10 V,
R
L
= 0.75
Ω
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
di
F
/ dt = 50 A /
µs
Rev.6.00 Sep 07, 2005 page 2 of 7
2SK2554
Main Characteristics
Power vs. Temperature Derating
200
500
200
10
PW
D
C
Maximum Safe Operation Area
10
0
µ
s
Channel Dissipation Pch (W)
µ
s
Drain Current I
D
(A)
150
100
50
20
10
5
2
1
0.5 Ta = 25°C
0.1 0.3
1
Operation in
this area is
limited by R
DS(on)
=
1
10
m
s
m
(1
s
O
ra
pe
100
sh
o
t)
n
tio
c
(T
=
°
C
25
50
)
0
50
100
150
200
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V 5 V
4V
3V
Pulse Test
60
100
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
80
80
V
DS
= 10 V
Pulse Test
60
40
2.5 V
40
Tc = 75°C
20
25°C
–25°C
20
V
GS
= 2 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
0.005
10 V
0.002
0.001
1
3
10
30
100
300
1000
V
GS
= 4 V
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
0.4
0.3
I
D
= 50 A
0.2
20 A
10 A
0
2
4
6
8
10
0.1
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.0005
Drain Current I
D
(A)
Rev.6.00 Sep 07, 2005 page 3 of 7
2SK2554
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.02
Pulse Test
0.016
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0.012
I
D
= 50 A
V
GS
= 4 V
10, 20 A
0.008
10, 20, 50 A
0.004
10 V
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t rr (ns)
500
200
100
50
100000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
30000
10000
3000
1000
Ciss
Coss
20
10
5
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
Crss
300
100
V
GS
= 0
f = 1 MHz
0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 75 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
100
10000
3000
td(off)
1000
tf
300
100
tr
td(on)
80
V
DD
= 10 V
25 V
50 V
16
60
V
DS
12
40
V
GS
8
20
V
DD
= 50 V
25 V
10 V
80
160
240
320
4
0
400
Switching Time t (ns)
0
30
V = 10 V, V = 30 V
GS
DD
PW = 5
µs,
duty < 1 %
10
0.1 0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.6.00 Sep 07, 2005 page 4 of 7
2SK2554
Reverse Drain Current vs.
Source to Drain Voltage
200
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
I
AP
= 50 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
(A)
160
10 V
120
5V
80
V
GS
= 0, –5 V
200
150
100
40
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
50
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θh
– c = 0.83°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
100
µ
0.01
10
µ
Pulse Width
PW (S)
Avalanche Test Circuit and Waveform
E
AR
=
V
DSS
1
• L • I
AP2
•
V
DSS
– V
DD
2
V
DS
Monitor
L
I
AP
Monitor
V
(BR)DSS
I
AP
V
DD
I
D
V
DS
Rg
Vin
15 V
D. U. T
50
Ω
0
V
DD
Rev.6.00 Sep 07, 2005 page 5 of 7
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