2SK2329(L), 2SK2329(S)
Silicon N Channel MOS FET
REJ03G1008-0200
(Previous: ADE-208-1356)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
G
1
2
3
D
1. Gate
2. Drain
3. Source
4. Drain
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2329(L), 2SK2329(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
30
±10
10
40
10
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±10
—
—
0.4
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.03
0.04
18
1250
540
120
20
145
225
125
0.9
100
Max
—
—
±10
100
1.4
0.04
0.06
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±200 µA,
V
DS
= 0
V
GS
=
±6.5
V, V
DS
= 0
V
DS
= 25 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 4 V*
3
I
D
= 5 A, V
GS
= 2.5 V*
3
I
D
= 5 A, V
DS
= 10 V*
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 4 V,
R
L
= 2
Ω
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/ dt = 20 A /
µs
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK2329(L), 2SK2329(S)
Main Characteristics
Power vs. Temperature Derating
40
100
50
10
10
DC
Maximum Safe Operation Area
Channel Dissipation Pch (W)
µ
s
s
Drain Current I
D
(A)
30
20
10
5
2
1
0.5
0.2
Ta = 25°C
1
2
PW
20
0m
Op
era
s(
tio
1s
Operation in
n(
ho
Tc
this area is
t)
=2
limited by R
DS(on)
5
°
C)
=1
1m
0
µ
s
10
0
50
100
150
200
0.1
0.5
5
10
20
50
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
5V
4V
2.5 V
20
Typical Transfer Characteristics
Drain Current I
D
(A)
12
Drain Current I
D
(A)
16
2V
16
V
DS
= 10 V
Pulse Test
12
Tc = 75°C
25°C
4
–25°C
8
V
GS
= 1.5 V
8
4
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
Drain to Source Saturation Voltage V
DS (on)
(V)
0.8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
V
GS
= 2.5 V
0.6
0.4
I
D
= 10 A
0.2
5A
2A
0.02
0.01
0.1 0.2
0.5
1
2
4V
0
2
4
6
8
10
5
10 20
50 100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK2329(L), 2SK2329(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.10
Pulse Test
0.08
I
D
= 2 A, 5 A, 10 A
0.06
2.5 V
0.04
2 A, 5 A, 10 A
0.02
0
-40
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
50
20
10
Tc = -25°C
25°C
5
2
1
0.5
0.1
75°C
V
DS
= 10 V
Pulse Test
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
5000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
2000
Ciss
1000
500
Coss
200
100
50
200
100
50
Crss
20
10
0.2
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
100
20
1000
Switching Characteristics
V
GS
= 4 V,
V
DD
= 10 V
PW = 3
µs,
duty < 1 %
500
80
V
DD
= 10 V
25 V
16
Switching Time t (ns)
td(off)
200
tf
60
V
GS
12
I
D
= 10 A
V
DS
100
50
tr
td(on)
40
8
20
V
DD
= 25 V
10 V
4
0
100
20
10
0.2
0
20
40
60
80
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK2329(L), 2SK2329(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
V
GS
= 0, –5 V
8
5V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
S
(t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
0.02
1
0.1
θch
– c(t) =
γs
(t)
• θch
– c
θch
– c = 6.25°C/W, Tc = 25°C
u
tP
lse
PDM
PW
T
0.03
0.0
D=
1s
ho
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= 10 V
90%
td(on)
90%
td(off)
tf
Vin
Vout
Vin
4V
50
Ω
10%
10%
10%
Vout
Monitor
Waveforms
90%
tr
Rev.2.00 Sep 07, 2005 page 5 of 7
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