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2SK2373

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size86KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK2373 Overview

Silicon N Channel MOS FET

2SK2373 Parametric

Parameter NameAttribute value
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
surface mountYES
Base Number Matches1
2SK2373
Silicon N Channel MOS FET
REJ03G1009-0300
Rev.3.00
Dec 27, 2006
Application
High speed power switching
Features
Low on-resistance
Small package
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for low signal load switch
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
D
3
1
2
G
1. Source
2. Gate
3. Drain
S
Note:
Marking is “ZE–”.
Rev.3.00 Dec 27, 2006 page 1 of 5

2SK2373 Related Products

2SK2373 2SK2373ZE-TR-E 2SK2373ZE-TL-E
Description Silicon N Channel MOS FET Silicon N Channel MOS FET Silicon N Channel MOS FET
Contacts 3 3 3
Reach Compliance Code compli unknow unknow
ECCN code EAR99 EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (Abs) (ID) 0.2 A 0.2 A 0.2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W
surface mount YES YES YES
Base Number Matches 1 1 1
Is it Rohs certified? - conform to conform to
Parts packaging code - SC-59A SC-59A
package instruction - SC-59A, MPAK-3 SMALL OUTLINE, R-PDSO-G3
Minimum drain-source breakdown voltage - 30 V 30 V
Maximum drain current (ID) - 0.2 A 0.2 A
Maximum drain-source on-resistance - 7.5 Ω 7.5 Ω
JESD-30 code - R-PDSO-G3 R-PDSO-G3
JESD-609 code - e6 e6
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal surface - TIN BISMUTH TIN BISMUTH
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED 20
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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