FSPJ264R4 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FSPJ264R4

FSPJ264R4: DescriptionPower Field-Effect Transistor, 43A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,; CategoryDiscrete semiconductor The transistor; File Size193KB，9 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

Download Datasheet Parametric Compare View All

FSPJ264R4 Overview

Power Field-Effect Transistor, 43A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

FSPJ264R4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	43 A
Maximum drain current (ID)	43 A
Maximum drain-source on-resistance	0.047 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	77 W
Maximum pulsed drain current (IDM)	160 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

FSPJ264R, FSPJ264F

Data Sheet

June 2001

File Number

4894

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

itle

PJ2

)

bje

dia

ista

Cha

wer

)

tho

dia

ista

Cha

wer

rchi

por

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r

DS(ON)

and Gate

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

Single Event Effects (SEE) which the Fairchild FS families

have always featured.

Features

• 43A, 250V, r

DS(ON)

= 0.047Ω

• UIS Rated

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 21nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

Star*Power Gold products. Star*Power FETs are optimized

for total dose and r

DS(ON)

performance while exhibiting SEE

capability at full rated voltage up to an LET of 37.

Star*Power Gold FETs have been optimized for SEE and

Gate Charge providing SEE performance to 80% of the

rated voltage for an LET of 82 with extremely low gate

charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45217W.

Symbol

Packaging

TO-254AA

Ordering Information

RAD LEVEL

10K

100K

300K

SCREENING LEVEL

PART NUMBER/BRAND

Engineering Samples FSPJ264D1

TXV

Space

TXV

Space

FSPJ264R3

FSPJ264R4

FSPJ264F3

FSPJ264F4

CAUTION: Beryllia Warning per MIL-PRF-19500

refer to package specifications.

FSPJ264R, FSPJ264F Rev. A2

FSPJ264R4 Related Products

	FSPJ264R4	FSPJ264R3	FSPJ264F4
Description	Power Field-Effect Transistor, 43A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	Power Field-Effect Transistor, 43A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	Power Field-Effect Transistor, 43A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V
Maximum drain current (Abs) (ID)	43 A	43 A	43 A
Maximum drain current (ID)	43 A	43 A	43 A
Maximum drain-source on-resistance	0.047 Ω	0.047 Ω	0.047 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	77 W	77 W	77 W
Maximum pulsed drain current (IDM)	160 A	160 A	160 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	-	Fairchild	Fairchild

Recommended Resources

M62430 internal block diagram

Delay light circuit using digital circuit (3)

Parrot Talking Toy Circuit

Anti-bounce circuit using TTL NAND gate

Precision summing circuit

Typical circuit of triac controlling three-phase electric heating device

LM3S811+ENC28J60 ping failure: I am working on a project recently and need to use LM3S811+ENC28J60 network module. The driver of ENC28J60 refers to the STM32 driver on the Internet. When the program is running , it can read that th...; jxndcl301 Microcontroller MCU

Several issues in LED driver design (transferred): In fact, LED driver design is not an easy task. Here is a summary of some experiences in LED driver design. [/color][/font][/backcolor][/color][/align][align=left][color=rgb(17, 17, 17)][backcolor=rgb...; qwqwqw2088 Power technology

Design of photon counting instrument based on photomultiplier tube (Figure): Author: Ren Mingyan, Hu Hai, Sun Jinying 　Date: 2007-2-1　 In medical examinations, the analysis and determination of various hormone levels and their trace metabolites, drugs and metabolites, vitamins...; fighting Analog electronics

[Help] EKK-LM3S8962 downloads program to CAN board: In the past two days, I used EKK-LM3S8962 to download the program to the CAN board, and it always shows **ERROR**: Unable to initialize target! How can I solve it? ? ? I used LM Flash Programmer to bu...; fskjhm Microcontroller MCU

Dear seniors, I have a problem that is very entangled. It is about nios ii. I would like to trouble you to give me some advice.: Hello, I am a newbie in SOPC, and now I have some troubles. I am using Quartus ii version 11.0, and its software editor is Eclipse, not nios ii IDE, so the online tutorials are not applicable. Now aft...; leizikobe FPGA/CPLD

Where can I buy cheap DSP 2812 or 2407 or other motor control development boards?: Where can I buy a cheap DSP 2812 or 2407 or other motor control development board? I can't afford it as a student....; jsw410923 Microcontroller MCU

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components