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2SC2620QCTL-E

Description
Silicon NPN Epitaxial Planar
CategoryDiscrete semiconductor    The transistor   
File Size87KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SC2620QCTL-E Overview

Silicon NPN Epitaxial Planar

2SC2620QCTL-E Parametric

Parameter NameAttribute value
package instructionMPAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)940 MHz
Base Number Matches1
2SC2620
Silicon NPN Epitaxial Planar
REJ03G0704-0200
(Previous ADE-208-1071)
Rev.2.00
Aug.10.2005
Application
VHF amplifier, Local oscillator
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
30
20
4
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 7

2SC2620QCTL-E Related Products

2SC2620QCTL-E 2SC2620 2SC2620QBTL-E
Description Silicon NPN Epitaxial Planar Silicon NPN Epitaxial Planar Silicon NPN Epitaxial Planar
package instruction MPAK-3 MPAK-3 MPAK-3
Contacts 3 3 3
Reach Compliance Code compli compliant compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 940 MHz 940 MHz 940 MHz
Base Number Matches 1 1 1
Collector-based maximum capacity 1.2 pF - 1.2 pF
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