2SK1337
Silicon N Channel MOS FET
REJ03G0934-0200
(Previous: ADE-208-1274)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
•
•
•
•
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-92(1))
D
G
1. Source
2. Drain
3. Gate
32
1
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1337
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW
≤
10
µs,
duty cycle
≤
1%
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
Tstg
*1
Ratings
100
±20
0.3
1.2
0.3
400
150
–55 to +150
Unit
V
V
A
A
A
mW
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
2. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
±20
—
—
1.0
—
—
0.22
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.5
4.0
0.35
35
14
3.5
2
4
17
15
0.9
80
Max
—
—
±10
50
2.0
4.5
6.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
2
I
D
= 0.2 A, V
GS
= 10 V *
I
D
= 0.2 A, V
GS
= 4 V *
2
I
D
= 0.2 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 0.2 A, V
GS
= 10 V,
R
L
= 150
Ω
2
I
F
= 0.3 A, V
GS
= 0
I
F
= 0.3 A, V
GS
= 0,
di
F
/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1337
Main Characteristics
Power vs. Temperature Derating
600
Maximum Safe Operation Area
5
2
Channel Dissipation Pch (mW)
Drain Current I
D
(A)
1
ar
ea
400
0.5
0.2
0.1
0.05
0.02
0.01
O
is per
lim at
ite ion
d in
b y th
R is
PW
=
10
DS
1
10
0
µ
1
0
µ
s
m
s
s
(o
n)
m
s
(1
D
C
200
sh
ot
)
O
pe
tio
ra
n
Ta = 25
°
C
0.3
1
3
10
30
100
0
50
100
150
0.005
0.1
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
1.0
10 V
5V
Pulse Test
V
GS
= 4 V
1.0
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
0.8
0.8
–25°C
T
C
= 25°C
75°C
V
DS
= 10 V
Pulse Test
0.6
3.5 V
0.6
0.4
3V
0.2
2.5 V
0
4
8
12
16
20
0.4
0.2
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
10 V
2
1
0.5
0.02
V
GS
= 4 V
Drain to Source Saturation Voltage V
DS (on)
(V)
3
I
D
= 0.5 A
2
1
0.2 A
0.1 A
0
2
4
6
8
10
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.05
0.1
0.2
0.5
1
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1337
Static Drain to Source on State
Resistance vs. Temperature
10
Pulse Test
8
I
D
= 0.5 A
0.2 A
0.1 A
6
V
GS
= 4 V
0.2 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
5
V
DS
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
2
1
0.5
0.2
0.1
0.05
0.02
4
0.5 A
V
GS
= 10 V
2
0.1 A
0
–40
0
40
80
120
160
0.05
0.1
0.2
0.5
1
2
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
1,000
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
100
Ciss
Coss
20
10
5
0.02
10
Crss
0.05
0.1
0.2
0.5
1
2
1
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
200
V
DD
= 25 V
160
50 V
80 V
V
GS
V
DS
I
D
= 0.3 A
V
DD
= 80 V
50 V
25 V
0
0.8
1.6
2.4
3.2
16
20
50
Switching Characteristics
Switching Time t (ns)
20
10
5
2
1
0.5
0.02
t
r
t
f
t
d (off)
120
12
80
8
t
d (on)
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 0.1%
•
•
40
4
0
0
4.0
0.05
0.1
0.2
0.5
1
2
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1337
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Reverse Drain Current I
DR
(A)
Pulse Test
0.8
0.6
V
DD
= 10 V
5V
0.4
0.2
V
GS
= 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Rev.2.00 Sep 07, 2005 page 5 of 6
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