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2SK2796L-E

Description
5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size87KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2796L-E Overview

5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

2SK2796L-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeDPAK(L)-(1)
package instructionIN-LINE, R-PSIP-T3
Contacts4
Manufacturer packaging codePRSS0004ZD-A4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN BISMUTH
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1034-0500
(Previous: ADE-208-534C)
Rev.5.00
Sep 07, 2005
Features
Low on-resistance
R
DS(on)
= 0.12
typ.
4 V gate drive devices.
High speed switching
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
G
1
2
3
D
1. Gate
2. Drain
3. Source
4. Drain
1
2 3
S
Rev.5.00 Sep 07, 2005 page 1 of 8

2SK2796L-E Related Products

2SK2796L-E 2SK2796 2SK2796L 2SK2796S
Description 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 3 3 3 2
Terminal form THROUGH-HOLE THROUGH-hole THROUGH-HOLE GULL WING
Terminal location SINGLE single SINGLE SINGLE
transistor applications SWITCHING switch SWITCHING SWITCHING
Transistor component materials SILICON silicon SILICON SILICON
Is it Rohs certified? conform to - incompatible incompatible
package instruction IN-LINE, R-PSIP-T3 - IN-LINE, R-PSIP-T3 DPAK-3
Contacts 4 - 3 3
Reach Compliance Code compli - compli compli
ECCN code EAR99 - EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V 60 V
Maximum drain current (Abs) (ID) 5 A - 5 A 5 A
Maximum drain current (ID) 5 A - 5 A 5 A
Maximum drain-source on-resistance 0.25 Ω - 0.25 Ω 0.25 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 - R-PSIP-T3 R-PSSO-G2
JESD-609 code e6 - e0 e0
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 20 W - 20 W 20 W
Maximum pulsed drain current (IDM) 20 A - 20 A 20 A
Certification status Not Qualified - Not Qualified Not Qualified
surface mount NO - NO YES
Terminal surface TIN BISMUTH - TIN LEAD TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 - 1 1
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