3SK295
Silicon N-Channel Dual Gate MOS FET
REJ03G0814-0300
(Previous ADE-208-387A)
Rev.3.00
Aug. 10, 2005
Application
•
UHF RF amplifier
Features
•
Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
•
Capable of low voltage operation
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZQ–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00, Aug 10.2005, page 1 of 6
3SK295
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate 1 to source breakdown voltage
Gate 2 to source breakdown voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage
Gate 2 to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
I
DS(on)
V
G1S(off)
V
G2S(off)
|y
fs
|
Ciss
Coss
Crss
PG
NF
Min
12
±8
±8
—
—
0.5
–0.5
0
16
1.2
0.6
—
16
—
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
Max
—
—
—
±100
±100
10
+0.5
+1.0
—
2.2
1.2
0.03
—
3
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200 µA , V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±10 µA,
V
G2S
= V
DS
= 0
I
G2
=
±10 µA,
V
G1S
= V
DS
= 0
V
G1S
=
±6
V, V
G2S
= V
DS
= 0
V
G2S
=
±6
V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.5 V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 MHz
V
DS
= 4 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 900 MHz
Rev.3.00, Aug 10.2005, page 2 of 6
3SK295
Main Characteristics
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
20
V
G2S
= 3 V
1.2 V
Typical Output Characteristics
Pulse test
(mA)
16
1.0 V
150
Channel Power Dissipation
I
D
100
12
0.8 V
8
0.6 V
4
V
G1S
= 0.4 V
2
4
6
8
10
50
Drain Current
50
100
150
200
0
0
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
2.0 V
V
DS
= 6 V
Drain Current vs. Gate2 to Source Voltage
20
2.0 V
1.5 V
V
DS
= 6 V
Pulse test
(mA)
16
2.5 V
1.5 V
(mA)
Pulse test
16
1.0 V
12
I
D
12
Drain Current
Drain Current
I
D
1.0 V
8
8
V
G1S
= 0.5 V
4
V
G2S
= 0.5 V
0
1
2
3
4
5
4
0
1
2
3
4
5
Gate1 to Source Voltage V
G1S
(V)
Gate2 to Source Voltage V
G2S
(V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Forward Transfer Admittance
|yfs| (mS)
30
V
DS
= 6 V
f = 1 kHz
V
G2S
= 3.0 V
18
2.5 V
2.0 V
1.5 V
6
0.5 V
0
0.4
0.8
1.2
1.6
2.0
0
1
1.0 V
25
Power Gain vs. Drain Current
PG (dB)
Power Gain
24
20
15
12
10
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
2
5
10
20
5
Gate1 to Source Voltage V
G1S
(V)
Drain Current
I
D
(mA)
Rev.3.00, Aug 10.2005, page 3 of 6
3SK295
Noise Figure vs. Drain Current
5
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
25
4
PG (dB)
Power Gain
NF (dB)
20
3
15
Noise Figure
2
10
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
0
1
5
2
5
10
20
0
Drain Current
I
D
(mA)
Drain to Source Voltage
V
DS
(V)
Noise Figure vs. Drain to Source Voltage
5
NF (dB)
Noise Figure
4
3
2
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
0
Drain to Source Voltage
V
DS
(V)
Rev.3.00, Aug 10.2005, page 4 of 6
3SK295
S11 Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–.2
–5
–4
–3
–.4
–.6
–.8
–1.5
–2
–120°
–90°
–60°
–1
180°
0°
150°
30°
1
1.5
2
120°
S21 Parameter vs. Frequency
90°
Scale: 0.5 / div.
60°
–150°
–30°
Condition: V
DS
= 4 V, V
G2S
= 3 V
I
D
= 10 mA, Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Condition: V
DS
= 4 V, V
G2S
= 3 V
I
D
= 10 mA, Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
Scale: 0.002/ div.
60°
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–.2
–150°
–30°
–.4
–120°
–90°
–60°
–.6
–.8
–1.5
–5
–4
–3
–2
–1
Condition: V
DS
= 4 V, V
G2S
= 3 V
I
D
= 10 mA, Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Condition: V
DS
= 4 V, V
G2S
= 3 V
I
D
= 10 mA, Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Rev.3.00, Aug 10.2005, page 5 of 6
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