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3SK297ZP-TL-E

Description
Silicon N-Channel Dual Gate MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size188KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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3SK297ZP-TL-E Overview

Silicon N-Channel Dual Gate MOS FET

3SK297ZP-TL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-61AA
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK297
Silicon N-Channel Dual Gate MOS FET
REJ03G0816-0300
(Previous ADE-208-389A)
Rev.3.00
Aug.10.2005
Application
UHF / VHF RF amplifier
Features
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
Capable of low voltage operation
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZP–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 8

3SK297ZP-TL-E Related Products

3SK297ZP-TL-E 3SK297
Description Silicon N-Channel Dual Gate MOS FET Silicon N-Channel Dual Gate MOS FET
package instruction SMALL OUTLINE, R-PDSO-G4 MPAK-4
Contacts 4 4
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (Abs) (ID) 0.025 A 0.025 A
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.15 W 0.15 W
Minimum power gain (Gp) 12 dB 12 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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