3SK298 datasheet, PDF - EEWORLD Datasheet

3SK298: DescriptionSilicon N-Channel Dual Gate MOS FET; CategoryDiscrete semiconductor The transistor; File Size182KB，9 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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3SK298 Overview

Silicon N-Channel Dual Gate MOS FET

Parameter Name	Attribute value
package instruction	CMPAK-4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (Abs) (ID)	0.025 A
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W
Minimum power gain (Gp)	12 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

3SK298

Silicon N-Channel Dual Gate MOS FET

REJ03G0817-0300

(Previous ADE-208-390A)

Rev.3.00

Aug.10.2005

Application

UHF / VHF RF amplifier

Features

•

Low noise figure.

NF = 1.0 dB typ. at f = 200 MHz

•

Capable of low voltage operation

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK–4)

1. Source

2. Gate1

3. Gate2

4. Drain

Note:

Marking is “ZP–“

Attention:

This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Rev.3.00 Aug 10, 2005 page 1 of 8

	3SK298	3SK298ZP-TL-E
Description	Silicon N-Channel Dual Gate MOS FET	Silicon N-Channel Dual Gate MOS FET
package instruction	CMPAK-4	LEAD FREE, SC-82, CMPAK-4
Contacts	4	4
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	12 V	12 V
Maximum drain current (ID)	0.025 A	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	12 dB	12 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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