R1EX25002ASA00I/R1EX25004ASA00I
R1EX25002ATA00I/R1EX25004ATA00I
Serial Peripheral Interface
2k EEPROM (256-word
×
8-bit)
4k EEPROM (512-word
×
8-bit)
Electrically Erasable and Programmable Read Only Memory
REJ03C0361-0001
Preliminary
Rev.0.01
Feb.21.2008
Description
R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 16-byte
page programming function to make it’s write operation faster.
.
Features
•
Single supply: 1.8 V to 5.5 V
•
Serial Peripheral Interface compatible (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
•
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
•
Power dissipation:
Standby: 2µA (max)
Active (Read): 2 mA (max)
Active (Write): 2.5 mA (max)
•
Automatic page write: 16-byte/page
•
Write cycle time: 5 ms
•
Endurance: 10
6
Erase/Write Cycles
•
Data retention: 10 Years
•
Small size packages: SOP-8pin, TSSOP-8pin
•
Shipping tape and reel
TSSOP-8pin: 3,000 IC/reel
SOP-8pin : 2,500 IC/reel
•
Temperature range:
−40
to
+85 °C
•
Lead free product.
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications
REJ03C0361-0001 Rev.0.01 Feb.21.2008
page 1 of 20
R1EX25002Axx00I/R1EX25004Axx00I
Ordering Information
Type No.
R1EX25002ASA00I
R1EX25004ASA00I
R1EX25002ATA00I
R1EX25004ATA00I
Internal organization Operating voltage
Frequency
2-kbit (256
×
8-bit)
1.8 V to 5.5 V
5 MHz
(2.5 V to 5.5 V)
4-kbit (512
×
8-bit)
2-kbit (256
×
8-bit)
4-kbit (512
×
8-bit)
1.8 V to 5.5 V
3 MHz
(1.8 V to 5.5V)
5 MHz
(2.5 V to 5.5 V)
3 MHz
(1.8 V to 5.5 V)
Package
150mil 8-pin plastic SOP
PRSP0008DF-B
(FP-8DBV)
Lead free
8-pin plastic TSSOP
PTSP0008JC-B
(TTP-8DAV)
Lead free
Pin Arrangement
8-pin SOP/TSSOP
S
Q
W
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
C
D
(Top view)
Pin Description
Pin name
C
D
Q
S
W
HOLD
V
CC
V
SS
Function
Serial clock
Serial data input
Serial data output
Chip select
Write protect
Hold
Supply voltage
Ground
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 2 of 20
R1EX25002Axx00I/R1EX25004Axx00I
Block Diagram
High voltage generator
V
CC
V
SS
Address generator
X
decoder
W
C
HOLD
D
Q
Control logic
S
Memory array
Y
decoder
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Supply voltage relative to V
SS
V
CC
Input voltage relative to V
SS
V
IN
1
Operating temperature range*
Topr
Storage temperature range
Tstg
Notes: 1. Including electrical characteristics and data retention.
2. V
IN
(min):
−3.0
V for pulse width
≤
50 ns.
3. Should not exceed V
CC
+
1.0 V.
Value
−0.6
to + 7.0
−0.5*
2
to +7.0*
3
−40
to +85
−55
to +125
Unit
V
V
°C
°C
DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature range
Symbol
V
CC
V
SS
V
IH
V
IL
Topr
Min
1.8
0
V
CC
×
0.7
1
−0.3*
−40
Typ
0
Max
5.5
0
2
V
CC
+
0.5*
V
CC
×
0.3
+85
Unit
V
V
V
V
°C
Notes: 1. V
IN
(min):
−1.0
V for pulse width
≤
50 ns.
2. V
IN
(max): V
CC
+ 1.0 V for pulse width
≤
50 ns.
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 3 of 20
R1EX25002Axx00I/R1EX25004Axx00I
DC Characteristics
Parameter
Input leakage current
Output leakage current
V
CC
current
Standby
Active
Symbol
I
LI
I
LO
I
SB
I
CC1
Min
Max
2
2
2
2
Unit
µA
µA
µA
mA
Test conditions
V
CC
= 5.5 V, V
IN
= 0 to 5.5 V
(S, D, C,
HOLD, W)
V
CC
= 5.5 V, V
OUT
= 0 to 5.5 V
(Q)
V
IN
= V
SS
or V
CC
,
V
CC
= 5.5 V
V
CC
= 5.5 V, Read at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9
Q = OPEN
V
CC
= 5.5 V, Write at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9
V
CC
= 5.5 V, I
OL
= 2 mA
V
CC
= 2.5 V, I
OL
= 1.5 mA
V
CC
= 5.5 V, I
OL
=
−2
mA
V
CC
= 2.5 V, I
OL
=
−0.4
mA
I
CC2
Output voltage
V
OL1
V
OL2
V
OH1
V
OH2
V
CC
×
0.8
V
CC
×
0.8
2.5
0.4
0.4
mA
V
V
V
V
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 4 of 20
R1EX25002Axx00I/R1EX25004Axx00I
AC Characteristics
Test Conditions
•
Input pules levels:
V
IL
= V
CC
×
0.2
V
IH
= V
CC
×
0.8
•
Input rise and fall time:
≤
10 ns
•
Input and output timing reference levels: V
CC
×
0.3, V
CC
×
0.7
•
Output reference levels: V
CC
×
0.5
•
Output load: 100 pF
(Ta =
−40
to
+85°C,
V
CC
= 2.5 V to 5.5 V)
Parameter
Clock frequency
S
active setup time
S
not active setup time
S
deselect time
S
active hold time
S
not active hold time
Clock high time
Clock low time
Clock rise time
Clock fall time
Data in setup time
Data in hold time
Clock low hold time after
HOLD
not active
Clock low hold time after
HOLD
active
Clock high setup time before
HOLD
active
Clock high setup time before
HOLD
not
active
Symbol
f
C
t
SLCH
t
SHCH
t
SHSL
t
CHSH
t
CHSL
t
CH
t
CL
t
CLCH
t
CHCL
t
DVCH
t
CHDX
t
HHCH
t
HLCH
t
CHHL
t
CHHH
Alt
f
SCK
t
CSS1
t
CSS2
t
CS
t
CSH
t
CLH
t
CLL
t
RC
t
FC
t
DSU
t
DH
Min
90
90
90
90
90
90
90
20
30
70
40
60
60
Max
5
1
1
100
70
50
50
50
100
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
cycles
Notes
1
1
2
2
Output disable time
t
SHQZ
t
DIS
Clock low to output valid
t
CLQV
t
V
Output hold time
t
CLQX
t
HO
0
Output rise time
t
QLQH
t
RO
Output fall time
t
QHQL
t
FO
HOLD
high to output low-Z
t
HHQX
t
LZ
HOLD
low to output high-Z
t
HLQZ
t
HZ
Write time
t
W
t
WC
Erase / Write Endurance
10
6
Notes: 1. t
CH
+
t
CL
≥
1/f
C
2. Value guaranteed by characterization, not 100% tested in production.
3. Value guaranteed by characterization, not 100% tested in products.
6
10 cycles(Ta = 25°C)
10
5
cycles(Ta = 85°C)
2
2
2
2
2
3
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 5 of 20