RQK0201QGDQA
Silicon N Channel MOS FET
Power Switching
REJ03G1321-0300
Rev.3.00
Jun 12, 2006
Features
•
Low on-resistance
R
DS(on)
= 25 mΩ typ (V
GS
= 4.5 V, I
D
= 2.4 A)
•
Low drive current
•
High speed switching
•
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Note:
Marking is “QG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Note1
Drain peak current
I
D(pulse)
Body - drain diode reverse drain current
I
DR
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
±12
4.5
15
4.5
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Jun 12, 2006 page 1 of 6
RQK0201QGDQA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
20
±12
—
—
0.4
—
—
9
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
30
38
12
479
106
48
14
53
35
6
4.6
0.9
1.3
0.85
Max
—
—
±10
1
1.4
39
53
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±10
V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2.4A, V
GS
= 4.5 V
Note3
I
D
= 2.4A, V
GS
= 2.5 V
Note3
I
D
= 2.4A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 2.4 A
V
GS
= 4.5 V
R
L
= 5.50
Ω
Rg = 4.7
Ω
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 4.5 A
I
F
= 4.5 A, V
GS
= 0
Note3
Rev.3.00 Jun 12, 2006 page 2 of 6
RQK0201QGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
100
Operation in this area
is limited by R
DS(on)
100
µs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
10
1
0.6
PW
10
m
s
=
1
DC
10
m
s
0.4
O
0.2
0
0.1
Ta = 25°C
1 Shot Pulse
m
s
pe
ra
tio
n
0
0
50
100
150
0.01
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
15
3V
10 V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
15
V
DS
= 10 V
Pulse Test
2.2 V
2.0 V
Drain Current I
D
(A)
9
1.8 V
Drain Current I
D
(A)
12
12
9
6
1.6 V
6
3
1.4 V
V
GS
= 0 V
3
Tc = 75°C
25°C
–25°C
1.5 2 2.5
0
0
2
4
6
8
10
0
0
0.5
1
3
3.5
4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
1.5
V
DS
= 10 V
Pulse Test
I
D
= 10 mA
Drain Current I
D
(A)
0.1
1
0.01 Tc = 75°C
25°C
0.001
–25°C
0.5
1 mA
0.1 mA
0.0001
0
0.5
1
1.5
2
2.5
3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 3 of 6
RQK0201QGDQA
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
400
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
300
200
4.5 A
100
2.4 A
1A
0
0
0.5 A
2
4
6
8
10
100
V
GS
= 2.5 V
4.5 V
10 V
10
0.1
1
10
100
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
70
50
Pulse Test
V
GS
= 4.5 V
I
D
= 4.5 A
40
2.4 A
60
2.4 A
50
I
D
= 4.5 A
40
1A
30
20
–25
0.5 A
Pulse Test
V
GS
=
2
.5 V
0
25
50
75
100 125 150
30
0.5 A
1A
20
–25
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
V
DS
= 20 V
Forward Transfer Admittance
|yfs| (S)
100
Pulse Test
V
DS
= 10 V
10
–25°C
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
1000
1
25°C
Tc = 75°C
100
0.1
10
0.01
0.01
0.1
1
10
100
1
–25
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
Rev.3.00 Jun 12, 2006 page 4 of 6
RQK0201QGDQA
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
16
1000
Switching Characteristics
V
DD
= 10 V
V
GS
= 4.5 V
Rg = 4.7
Ω
PW = 5
µs
Tc = 25°C
30
5V
10 V
V
DD
= 20 V
10 V
12
Switching Time
t (ns)
tr
100
20
V
DD
= 20 V
V
GS
8
td(off)
td(on)
10
tf
10
5V
I
D
=
4.5
A
Tc = 25°C
4
0
V
DS
0
2
4
6
8
0
10
1
0.1
1
10
100
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
900
850
800
100
Coss
Crss
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss (pF)
750
700
650
600
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
V
GS
= 0 V
f = 1 MHz
10
0
5
10
15
20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
15
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
V
GS
= 0
0.5
Reverse Drain Current I
DR
(A)
10 V
12
5V
9
Pulse Test
Tc = 25°C
Body-Drain Diode Forward Voltage V
SDF
(V)
0.4
I
D
= 10 mA
6
3
0
0
0.3
1 mA
0.2
25
50
75
100
125
150
–5, –10 V
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 5 of 6
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