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RJK0366DPA-00-J0

Description
Silicon N Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size100KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK0366DPA-00-J0 Overview

Silicon N Channel Power MOS FET Power Switching

RJK0366DPA-00-J0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-XDSO-N5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.0168 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N5
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK0366DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1656-0600
Rev.6.00
Aug 05, 2008
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 8.5 m
typ. (at V
GS
= 10 V)
Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Note1
Ratings
30
±20
25
100
25
11
12.1
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
I
AP Note 2
E
AR Note 2
Pch
θch-c
Note3
Tch
Tstg
Note3
REJ03G1656-0600 Rev.6.00 Aug 05, 2008
Page 1 of 6

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