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RJK0364DPA

Description
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size100KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK0364DPA Overview

35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET

RJK0364DPA Parametric

Parameter NameAttribute value
Minimum breakdown voltage30 V
Number of terminals5
Processing package descriptionLEAD FREE, WPAK-8
EU RoHS regulationsYes
stateTransferred
Shell connectionDRAIN
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_35 A
Maximum leakage current35 A
Maximum drain on-resistance0.0112 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jesd_30_codeR-XDSO-N5
moisture_sensitivity_level1
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsUNSPECIFIED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_35 W
Maximum leakage current pulse140 A
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Power
surface mountYES
terminal coatingNOT SPECIFIED
Terminal formNO LEAD
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_20
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK0364DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1654-0300
Rev.3.00
Aug 05, 2008
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.0 m
typ. (at V
GS
= 10 V)
Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Note1
Ratings
30
±20
35
140
35
15
22.5
35
3.57
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
I
AP Note 2
E
AR Note 2
Pch
θch-c
Note3
Tch
Tstg
Note3
REJ03G1654-0300 Rev.3.00 Aug 05, 2008
Page 1 of 6

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Description 35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET 35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 5 5
Shell connection DRAIN DRAIN
Number of components 1 1
Maximum operating temperature 150 Cel 150 °C
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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