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RJK5012DPE-00-J3

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK5012DPE-00-J3 Overview

Silicon N Channel MOS FET High Speed Power Switching

RJK5012DPE-00-J3 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSC-83
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.62 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK5012DPE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1487-0200
Rev.2.00
Nov 29, 2006
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
500
±30
12
24
12
24
4
0.88
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Nov 29, 2006 page 1 of 3

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