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RTQ030P02FRATR

Description
Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size949KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

RTQ030P02FRATR Overview

Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN

RTQ030P02FRATR Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)12 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Transistor
RTQ030P02FRA
RTQ030P02
AEC-Q101 Qualified
2.5V Drive Pch MOS FET
RTQ030P02FRA
RTQ030P02
Structure
Silicon P-channel MOSFET
External dimensions
(Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.0MAX
0.85
0.7
Features
1) Low On-resistance.(110mΩ at 2.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive.(2.5V)
1.6
2.8
0~0.1
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : TS
Applications
DC-DC converter
Packaging specifications
Package
Type
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
Code
Basic ordering unit
(pieces)
∗2
RTQ030P02FRA
RTQ030P02
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw
10µs, Duty cycle
1%
2 Mounted on a ceramic board
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
1
2
1
Limits
−20
±12
±3
±12
−1
−4
1.25
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
100
Unit
°C
/ W
Rev.A
0.3~0.6
1/4
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