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RJK6011DJE-00-Z0

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size93KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK6011DJE-00-Z0 Overview

Silicon N Channel MOS FET High Speed Power Switching

RJK6011DJE-00-Z0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance52 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK6011DJE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1577-0300
Rev.3.00
Oct 03, 2008
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
Pch
θ
ch-a
Tch
Tstg
Ratings
600
±30
0.1
0.4
0.1
0.4
0.9
139
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 1 of 6

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