HRW0503A datasheet, PDF - EEWORLD Datasheet

HRW0503A: Description0.5 A, 30 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size69KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HRW0503A Overview

0.5 A, 30 V, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	SC-59A, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	5 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL

HRW0503A

Silicon Schottky Barrier Diode for Rectifying

REJ03G0158-0400Z

(Previous: ADE-208-016C)

Rev.4.00

Jan.06.2004

Features

•

Low forward voltage drop and suitable for high efficiency rectifying.

•

MPAK Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

HRW0503A

Laser Mark

Package Code

MPAK

Pin Arrangement

(Top View)

1. NC

2. Anode

3. Cathode

Rev.6.00, Jan.06.2004, page 1 of 5

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