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HSB226WK

Description
0.05 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size57KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HSB226WK Overview

0.05 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE

HSB226WK Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSC-70
package instructionSC-70, CMPAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.33 V
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.05 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage25 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
HSB226WK
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0592-0200
Rev.2.00
Sep 15, 2006
Features
Low reverse current, Low capacitance.
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSB226WK
Laser Mark
E6
Package Name
CMPAK
Package Code
PTSP0003ZB-A
Pin Arrangement
3
2
1
(Top View)
1. Anode
2. Anode
3. Cathode
Rev.2.00 Sep 15, 2006 page 1 of 4
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