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HSB276AYP

Description
0.03 A, 5 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size143KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HSB276AYP Overview

0.03 A, 5 V, 2 ELEMENT, SILICON, SIGNAL DIODE

HSB276AYP Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSC-82
package instructionSC-82, CMPAK-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
Maximum reverse current50 µA
Reverse test voltage0.5 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
HSB276AYP
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0595-0100
(Previous: ADE-208-1051)
Rev.1.00
Apr 06,2005
Features
High forward current, Low capacitance.
CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSB276AYP
Laser Mark
E9
Package Name
CMPAK-4
Package Code
(Previous Code)
PTSP0004ZB-A
(CMPAK-4)
Pin Arrangement
4
3
4
3
E9
1
(Top View)
2
1
(Top View)
2
1. Anode
2. Anode
3. Cathode
4. Cathode
Rev.1.00 Apr 06, 2005 page 1 of 4

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