HTT1115E
Silicon NPN Epitaxial Twin Transistor
REJ03G0838-0200
(Previous ADE-208-1439A)
Rev.2.00
Aug.10.2005
Features
•
Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor
2SC5700
2SC5757
Q2: Equivalent OSC transistor
Outline
RENESAS Package code: PXSF0006LA-A
(Package name: EMFPAK-6)
Pin Arrangement
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Base Q2
5. Emitter Q2
6. Base Q1
6
5
4
B1 6
Q1
E2 5
Q2
B2 4
1
2 3
C1 1
E1 2
C2 3
Note:
Marking is “F”.
Rev.2.00 Aug 10, 2005 page 1 of 8
HTT1115E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Q1
15
4
1.5
50
Total 200*
150
–55 to
+150
150
–50 to +150
Q2
10
3.5
1.5
80
Unit
V
V
V
mA
mW
°C
°C
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Emitter to base voltage
V
EBO
Collector current
I
C
Collector power dissipation
P
C
Junction temperature
Tj
Storage temperature
Tstg
Note: Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Electrical Characteristics (Q1)
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
Gain bandwidth product
Forward transfer coefficient
Noise figure
Symbol
V
(BR)CBO
I
CBO
I
CEO
I
EBO
h
FE
C
re
f
T
|S
21
|
2
NF
Min
15
⎯
⎯
⎯
100
⎯
10
13
⎯
Typ
⎯
⎯
⎯
⎯
130
0.3
12
16
1.0
Max
⎯
0.1
1
0.2
170
0.45
⎯
⎯
2.0
Unit
V
µA
µA
µA
⎯
pF
GHz
dB
dB
Test conditions
I
C
= 10
µA,
I
E
= 0
V
CB
= 15 V, I
E
= 0
V
CE
= 4 V, R
BE
= infinite
V
EB
= 0.8 V, I
C
= 0
V
CE
= 1 V, I
C
= 5 mA
V
CB
= 1 V, f = 1 MHz
Emitter ground
V
CE
= 1 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz,
Γ
S
=
Γ
L
= 50
Ω
Electrical Characteristics (Q2)
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
Gain bandwidth product
Forward transfer coefficient
Noise figure
Symbol
V
(BR)CBO
I
CBO
I
CEO
I
EBO
h
FE
C
re
f
T
|S
21
|
2
NF
Min
10
⎯
⎯
⎯
80
⎯
4
7
⎯
Typ
⎯
⎯
⎯
⎯
100
0.8
6
10
1.5
Max
⎯
0.6
0.2
0.1
130
1.1
⎯
⎯
2.3
Unit
V
µA
µA
µA
⎯
pF
GHz
dB
dB
Test conditions
I
C
= 10
µA,
I
E
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 3.5 V, R
BE
= infinite
V
EB
= 1.5 V, I
C
= 0
V
CE
= 1 V, I
C
= 5 mA
V
CB
= 1 V, f = 1 MHz
Emitter ground
V
CE
= 1 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Γ
S
=
Γ
L
= 50
Ω
Rev.2.00 Aug 10, 2005 page 2 of 8
HTT1115E
Main Characteristics (Q1)
Typical Output Characteristics
50
450
µA
Typical Forward Transfer Characteristics
50
V
CE
= 1 V
0
µ
A
400
µA
Collector Current I
C
(mA)
Collector Current I
C
(mA)
50
350
µA
300
µA
40
30
40
250
µA
200
µA
150
µA
30
20
20
100
µA
10
I
B
= 50
µA
10
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
200
Base to Emitter Voltage V
BE
(V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
0.5
I
E
= 0
f = 1 MHz
DC Current Transfer Ratio h
FE
V
CE
=1V
0.4
0.3
0.2
100
0.1
0
1
2
5
10
20
50
100
0
0.4
0.8
1.2
1.6
2.0
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Collector to Base Voltage V
CB
(V)
S
21
Parameter vs. Collector Current
20
V
CE
= 2 V
Gain Bandwidth Product f
T
(GHz)
20
f = 1 GHz
16
S
21
Parameter |S
21
|
2
(dB)
V
CE
= 2 V
16
12
8
12
8
V
CE
= 1V
4
V
CE
= 1 V
4
0
f = 900 MHz
0
1
2
5
10
20
50
100
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 8
HTT1115E
Noise Figure vs. Collector Current
5
4
f = 900 MHz
V
CE
= 1 V
Noise Figure NF (dB)
3
2
V
CE
= 2 V
1
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 4 of 8
HTT1115E
Main Characteristics (Q2)
Typical Output Characteristics
50
µ
A
Typical Forward Transfer Characteristics
50
V
CE
= 1 V
500
450
µ
A
4
A
00
µ
Collector Current I
C
(mA)
40
300
Collector Current I
C
(mA)
3.5
350
µ
A
µ
A
40
250
30
µ
A
A
200
µ
30
20
150
µ
A
100
µ
A
20
10
I
B
= 50
µA
10
0
0.5 1.0 1.5
2.0
2.5
3.0
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
200
Base to Emitter Voltage V
BE
(V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance C
re
(pF)
1.6
I
E
= 0
f = 1 MHz
1.4
DC Current Transfer Ratio h
FE
V
CE
= 1 V
1.2
1.0
100
0.8
0.6
0
0.4
0.8
1.2
1.6
2.0
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Collector to Base Voltage V
CB
(V)
Gain Bandwidth Product vs.
Collector Current
20
20
f = 1 GHz
16
V
CE
= 2 V
V
CE
= 1 V
S
21
Parameter vs. Collector Current
f = 900 MHz
Gain Bandwidth Product f
T
(GHz)
S
21
Parameter |S
21
|
2
(dB)
16
V
CE
= 2V
12
V
CE
= 1V
8
12
8
4
4
0
0
1
2
5
10
20
50
100
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
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