CR03AM-12
Thyristor
Low Power Use
REJ03G0352-0200
Rev.2.00
Mar.01.2005
Features
•
I
T (AV)
: 0.3 A
•
V
DRM
: 600 V
•
I
GT
: 100
µA
•
Non-Insulated Type
•
Glass Passivation Type
Outline
PRSS0003EA-A
(Package name:TO-92)
2
3
1
3
2
1
1. Cathode
2. Anode
3. Gate
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
DC off-state voltage
Note1
Symbol
V
RRM
V
RSM
V
R(DC)
V
DRM
V
DSM
V
D(DC)
Voltage class
12
600
800
480
600
800
480
Unit
V
V
V
V
V
V
Rev.2.00,
Mar.01.2005,
page 1 of 7
CR03AM-12
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Ratings
0.47
0.3
20
1.6
0.5
0.1
6
6
0.3
– 40 to +110
– 40 to +125
0.23
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 47°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance R
GK
= 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Min.
—
—
—
—
0.2
1
—
—
Typ.
—
—
—
—
—
—
1.5
—
Max.
0.1
0.1
1.8
0.8
—
100
Note2
3
180
Unit
mA
mA
V
V
V
µA
mA
°C/W
Test conditions
Tj = 110°C, V
RRM
applied
Tj = 110°C, V
DRM
applied,
R
GK
= 1 kΩ
Ta = 25°C, I
TM
= 4 A,
instantaneous value
Tj = 25°C, V
D
= 6 V,
Note3
I
T
= 0.1 A
Tj = 110°C, V
D
= 1/2 V
DRM
,
R
GK
= 1 kΩ
Tj = 25°C, V
D
= 6 V,
Note3
I
T
= 0.1 A
Tj = 25°C, V
D
= 12 V,
R
GK
= 1 kΩ
Junction to ambient
Notes: 2. If special values of I
GT
are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
I
GT
(µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3 I
GT
, V
GT
measurement circuit.
A1
I
GS
3V
DC
A3
R
GK
1
1kΩ
Switch
I
GT
A2
2
V1
V
GT
TUT
6V
DC
60Ω
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.2.00,
Mar.01.2005,
page 2 of 7
CR03AM-12
Performance Curves
Maximum On-State Characteristics
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Rated Surge On-State Current
20
Ta = 25°C
Surge On-State Current (A)
18
16
14
12
10
8
6
4
2
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
10
–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
10
2
×
100 (%)
Gate Characteristics
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40 –20
0
20
40
60
80 100 120
Typical Example
P
GM
= 0.5W
V
FGM
= 6V
P
G(AV)
= 0.1W
V
GT
= 0.8V
(Tj = 25°C)
I
GT
= 100µA
(Tj = 25°C)
V
GD
= 0.2V
I
FGM
= 0.3A
Gate Voltage (V)
10
1
10
0
10
–1
10
–2
5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5
Gate Current (mA)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
1.0
0.9
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
200
180
160
140
120
100
80
60
40
20
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
Gate Trigger Voltage (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Distribution
Typical Example
I
GT
(25°C) = 35µA
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Time (s)
Rev.2.00,
Mar.01.2005,
page 3 of 7
CR03AM-12
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
160
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.5
Average Power Dissipation (W)
Ambient Temperature (°C)
0.4
θ
= 30°
0.3
180°
120°
90°
60°
140
120
100
80
60
40
20
0
0
θ
360°
Resistive,
inductive loads
Natural convection
0.2
θ
0.1
360°
Resistive,
inductive loads
0
0.1
0.2
0.3
0.4
0.5
θ
= 30° 90° 180°
60° 120°
0.1
0.2
0.3
0.4
0.5
0
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
Maximum Average Power Dissipation
(Single-Phase Full Wave)
0.5
Average Power Dissipation (W)
180°
Ambient Temperature (°C)
0.4
60°
θ
= 30°
90°
120°
140
120
100
80
60
40
20
0
0
θ
θ
360°
Resistive loads
Natural convection
0.3
0.2
0.1
θ
θ
360°
0
0
0.1
0.2
θ
= 30° 60° 90° 120° 180°
0.1
0.2
0.3
0.4
0.5
Resistive loads
0.3
0.4
0.5
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
160
Maximum Average Power Dissipation
(Rectangular Wave)
0.5
Average Power Dissipation (W)
Ambient Temperature (°C)
0.4
θ
= 30°
270°
180°
120°
90°
DC
60°
140
120
100
80
60
40
20
0
0
Resistive,
inductive loads
Natural convection
θ
= 30°
60°
90°
θ
360°
0.3
0.2
θ
120°
180°
270°
DC
0.1
360°
Resistive,
inductive loads
0
0
0.1
0.2
0.3
0.4
0.5
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00,
Mar.01.2005,
page 4 of 7
CR03AM-12
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
160
140
120
100
80
60
40
20
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
×
100 (%)
160
140
120
100
80
60
40
20
×
100 (%)
Typical Example
R
GK
= 1kΩ
Typical Example
Tj = 110°C
0
–40 –20
0
20
40
60
80 100 120
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 1kΩ)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
×
100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Holding Current vs.
Junction Temperature
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–60 –40 –20 0 20 40 60 80 100 120 140
R
GK
= 1kΩ
R
GK
= 1kΩ
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Holding Current (mA)
Distribution
Typical Example
I
GT
(25°C) = 35µA
Tj = 25°C
Tj = 110°C
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
×
100 (%)
500
×
100 (%)
Holding Current vs.
Gate to Cathode Resistance
Typical Example
I
GT
(25°C) I
H
(1kΩ)
10µA
1.0mA
#1
26µA
1.1mA
#2
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
400
Holding Current (R
GK
= rkΩ)
Holding Current (R
GK
= 1kΩ)
300
#1
#2
200
100
0
10
–2
2 3 5 710
–1
2 3 5 7 10
0
2 3 5 7 10
1
V
D
= 12V, Tj = 25°C
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Rev.2.00,
Mar.01.2005,
page 5 of 7
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