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K9F5616Q0C-JCB0

Description
Flash, 16MX16, 40ns, PBGA63
Categorystorage    storage   
File Size1MB,42 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
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K9F5616Q0C-JCB0 Overview

Flash, 16MX16, 40ns, PBGA63

K9F5616Q0C-JCB0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Maximum access time40 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
JESD-609 codee3
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level1
Number of departments/size2K
Number of terminals63
word count16777216 words
character code16000000
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
page size256 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply1.8 V
Certification statusNot Qualified
ready/busyYES
Department size8K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNAND TYPE
Base Number Matches1
K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
1.0
Initial issue.
1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
4. Add the specification of Block Lock scheme.(Page 32~35)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
6. Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.C
2.0
1. The Maximum operating current is changed.
Program : Icc2 20mA-->25mA
Erase : Icc3 20mA-->25mA
The min. Vcc value 1.8V devices is changed.
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F5608U0C-FCB0,FIB0
K9F5608Q0C-HCB0,HIB0
K9F5616U0C-HCB0,HIB0
K9F5616U0C-PCB0,PIB0
K9F5616Q0C-HCB0,HIB0
K9F5608U0C-HCB0,HIB0
K9F5608U0C-PCB0,PIB0
Errata is added.(Front Page)-K9F56XXQ0C
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45 15 25 50 15 25 30
45
Relaxed value 60 20 40 60 20 40 40
55
New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
1. The guidence of LOCKPRE pin usage is changed.
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-
READ, connect it Vss.(Before)
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect
it Vss or leave it N.C(After)
2. 2.65V device is added.
3.Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Jan. 17th 2003
Preliminary
Draft Date
Apr. 25th 2002
Dec.14th 2002
Remark
Advance
Preliminary
2.1
Mar. 5th 2003
Preliminary
2.2
Mar. 13rd 2003
2.3
Mar. 26th 2003
2.4
Apr. 4th 2003
Jun. 30th 2003
2.5
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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