HAT2200R
Silicon N Channel Power MOS FET
Power Switching
REJ03G0232-0200Z
Rev.2.00
Apr.05.2004
Features
•
•
•
•
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 22 mΩ typ. (at V
GS
= 10 V)
Outline
SOP-8
8
5
7 6
5 6 7 8
D D D D
3
1 2
4
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Rev.2.00, Apr.05.2004, page 1 of 7
HAT2200R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Ambient Thermal Impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-a
Note3
Tch
Tstg
Ratings
100
±20
8
64
8
8
6.4
2.5
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
—
—
3.5
—
—
8
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
22
23
14
2300
280
90
1.3
32
12
8
16
4
32
4.5
0.79
45
Max
—
± 0.1
1
5.0
28
33
—
—
—
—
—
—
—
—
—
—
—
—
1.03
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 4 A, V
GS
= 10 V
Note4
I
D
= 4 A, V
GS
= 8 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 50 V
V
GS
= 10 V
I
D
= 8 A
V
GS
= 10 V, I
D
= 4 A
V
DD
≅
30 V
R
L
= 7.5
Ω
Rg = 4.7
Ω
IF = 8 A, V
GS
= 0
Note4
IF = 8 A, V
GS
= 0
diF/ dt = 100 A/ µs
Rev.2.00, Apr.05.2004, page 2 of 7
HAT2200R
Main Characteristics
Power vs. Temperature Derating
4.0
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
Maximum Safe Operation Area
10
µs
Pch (W)
I
D
(A)
10
100
µs
Channel Dissipation
Drain Current
1
Operation in
this area is
0.1 limited by R
DS(on)
DC Operation
(PW
£
10 s)
Note 5
2.0
1 ms
PW =
10 ms
1.0
0.01
0
50
100
150
Ta (°C)
200
Ambient Temperature
Ta = 25°C
0.001 1 shot Pulse
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V
DS
(V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
16
Typical Output Characteristics
20
5.8 V
10 V
I
D
(A)
16
12
5.6 V
8
V
GS
= 5.4 V
I
D
(A)
Drain Current
6V
12
Tc = 75°C
25°C
4
–25°C
Drain Current
8
4
Pulse Test
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
2
4
6
Gate to Source Voltage
10
8
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(mV)
250
Pulse Test
200
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V
GS
= 8 V
20
10
5
2
1
1
10
Drain Current
100
I
D
(A)
10 V
Drain to Source Voltage
150
I
D
= 5 A
100
50
2A
1A
0
5
10
15
20
Gate to Source Voltage V
GS
(V)
Rev.2.00, Apr.05.2004, page 3 of 7
HAT2200R
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
1 A, 2 A, 5 A
40
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance |yfs| (S)
100
Tc = –25°C
10
25°C
75°C
1
V
DS
= 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
30
V
GS
= 8 V
20
10 V
10
2
-25
I
D
= 1 A, 2 A, 5 A
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
Coss
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Crss
Ciss
100
Reverse Recovery Time trr (ns)
50
20
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
1
10
Reverse Drain Current I
DR
100
(A)
10
0.1
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Switching Characteristics
20
1000
Dynamic Input Characteristics
V
DS
(V)
250
Switching Time t (ns)
200
Drain to Source Voltage
150
V
DS
V
GS
12
Gate to Source Voltage
V
DS
= 100 V
50 V
25 V
16
V
GS
(V)
I
D
= 8 A
V
GS
= 10 V, V
DS
= 30 V
Rg = 4.7Ω, duty < 1 %
100
td(off)
td(on)
10
tr
1
0.1
tf
100
8
50
V
DS
= 100 V
50 V
25 V
10
20
30
40
Gate Charge Qg (nC)
4
0
50
0
1
Drain Current
10
I
D
(A)
100
Rev.2.00, Apr.05.2004, page 4 of 7
HAT2200R
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
I
AP
= 8 A
V
DD
= 50 V
duty < 0.1 %
Rg > 50
Ω
20
(A)
16
10 V
V
GS
= 0 V, –5 V
8
Reverse Drain Current I
F
12
6
8
4
4
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SDF
(V)
2
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Normalized Transient Thermal Impedance
γ
s (t)
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1s
ho
u
tp
ls e
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
0.001
D=
PW
T
0.0001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Rev.2.00, Apr.05.2004, page 5 of 7
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