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BB304MDW-TL-E

Description
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size296KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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BB304MDW-TL-E Overview

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

BB304MDW-TL-E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-143
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Minimum power gain (Gp)24 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BB304M
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0827-0600
(Previous ADE-208-605D)
Rev.6.00
Aug.10.2005
Features
Built in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
(PG = 29 dB typ. at f = 200 MHz)
Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “DW –”.
2. BB304M is individual type number of RENESAS BBFET.
Rev.6.00 Aug 10, 2005 page 1 of 9

BB304MDW-TL-E Related Products

BB304MDW-TL-E BB304M
Description Built in Biasing Circuit MOS FET IC VHF RF Amplifier Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Is it Rohs certified? conform to incompatible
Parts packaging code SOT-143 SOT-143
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (Abs) (ID) 0.025 A 0.025 A
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.05 pF 0.05 pF
highest frequency band VERY HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 240
Polarity/channel type N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 24 dB 24 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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