BB305M
Built in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
REJ03G0829-0600
(Previous ADE-208-607D)
Rev.6.00
Aug.10.2005
Features
•
•
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Superior cross modulation characteristics.
High gain; (PG = 28 dB typ. at f = 200 MHz)
Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
•
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “EW –”.
2. BB305M is individual type number of RENESAS BBFET.
Rev.6.00 Aug 10, 2005 page 1 of 9
BB305M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
Ciss
Coss
Crss
I
D(op)
1
I
D(op)
2
Forward transfer admittance
|y
fs
|1
|y
fs
|2
Power gain
PG1
PG2
Noise figure
NF1
NF2
Min
12
+10
±10
—
—
0.4
0.4
2.3
1.1
—
10
—
23
—
24
—
—
—
Typ
—
—
—
—
—
—
—
2.8
1.5
0.017
15
13
28
28
28
28
1.4
1.4
Max
—
—
—
+100
±100
1.0
1.0
3.5
1.9
0.04
20
—
—
—
—
—
1.9
—
Unit
V
V
V
nA
nA
V
V
pF
pF
pF
mA
mA
mS
mS
dB
dB
dB
dB
Test conditions
I
D
= 200
µA,
V
G1S
= V
G2S
= 0
I
G1
= +10
µA,
V
G2S
= V
DS
= 0
I
G2
= ±10
µA,
V
G1S
= V
DS
= 0
V
G1S
= +9 V, V
G2S
= V
DS
= 0
V
G2S
= ±9 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G2S
= 4 V
I
D
= 100
µA
V
DS
= 5 V, V
G1S
= 5 V
I
D
= 100
µA
V
DS
= 5 V, V
G1
= 5 V
V
G2S
=4 V, R
G
= 82 kΩ
f = 1 MHz
V
DS
= 5 V, V
G1
= 5 V, V
G2S
= 4 V
R
G
= 82 kΩ
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 220 kΩ
V
DS
= 5 V, V
G1
= 5 V, V
G2S
= 4 V
R
G
=82 kΩ, f = 1 kHz
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 220 kΩ, f = 1 kHz
V
DS
= 5 V, V
G1
= 5 V, V
G2S
= 4 V
R
G
= 82 kΩ, f = 200 MHz
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 220 kΩ, f = 200 MHz
V
DS
= 5 V, V
G1
= 5 V, V
G2S
= 4 V
R
G
= 82 kΩ, f = 200 MHz
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 220 kΩ, f = 200 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9
BB305M
Main Characteristics
Test Circuit for Operating Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Gate 1
R
G
V
G1
A
I
D
Drain
Source
200MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input(50
Ω
)
1000p
36p
L1
1000p
47k
BBFET
L2
1000p
47k
Output(50
Ω
)
10p max
1000p
1SV70
R
G
82k
RFC
1SV70
1000p
V
D
= V
G1
Unit : Resistance (
Ω
)
Capacitance (F)
L1 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
φ1mm
Enameled Copper Wire,Inside dia 5mm, 2Turns
Rev.6.00 Aug 10, 2005 page 3 of 9
BB305M
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
200
25
k
Ω
k
Ω
68
Typical Output Characteristics
V
G2S
= 4 V
V
G1
= V
DS
Drain Current I
D
(mA)
150
15
100
10
50
5
R
G
k
Ω
k
Ω
2
Ω
8
k
0
10
k
Ω
0
12
k
Ω
50
k
Ω
1
180
0 k
Ω
= 22
0
50
100
150
200
0
1
2
3
4
56
47
20
5
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs.
Gate2 to Source Voltage
25
V
DS
= V
G1
= 5 V
4
7 k
Ω
56 k
Ω
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 68 k
Ω
16
Drain Current I
D
(mA)
20
15
68 k
Ω
82 k
Ω
100 k
Ω
120 k
Ω
150 k
Ω
180 k
Ω
Drain Current I
D
(mA)
12
3V
8
4V
10
5
2V
4
V
G2S
= 1 V
1
2
3
4
5
R
G
= 220 k
Ω
0
0.8
1.6
2.4
3.2
4.0
0
Gate2 to Source Voltage V
G2S
(V)
Gate1 Voltage V
G1
(V)
Drain Current vs. Gate1 Voltege
20
V
DS
= 5 V
R
G
= 82 kΩ
20
Drain Current vs. Gate1 Voltege
16
16
V
DS
= 5 V
R
G
= 100 kΩ
Drain Current I
D
(mA)
Drain Current I
D
(mA)
12
3V
4V
12
4V
8
3V
2V
V
G2S
= 1 V
0
1
2
3
4
5
8
2V
4
V
G2S
= 1 V
0
1
2
3
4
5
4
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Rev.6.00 Aug 10, 2005 page 4 of 9
BB305M
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 68 kΩ
f = 1 kHz
4V
3V
18
2V
30
V
DS
= 5 V
R
G
= 82 kΩ
f = 1 kHz
4V
3V
18
2V
Forward Transfer Admittance
vs. Gate1 Voltage
24
24
12
12
6
V
G2S
= 1 V
0
1
2
3
4
5
6
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 100 kΩ
f = 1 kHz
4V
3V
18
2V
40
35
30
25
20
15
10
10
Power Gain vs. Gate Resistance
12
Power Gain PG (dB)
24
6
V
G2S
= 1 V
0
1
2
3
4
5
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 200 MHz
20
50
100 200
500 1000
Gate1 Voltage V
G
(V)
Gate Resistance R
G
(kΩ)
Noise Figure vs. Gate Resistance
4
40
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 200 MHz
35
Power Gain vs. Drain Current
Noise Figure NF (dB)
3
Power Gain PG (dB)
30
25
20
15
10
0
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
R
G
= variable
f = 200 MHz
5
10
15
20
25
30
2
1
0
10
20
50
100 200
500 1000
Gate Resistance R
G
(kΩ)
Drain Current I
D
(mA)
Rev.6.00 Aug 10, 2005 page 5 of 9
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