BB501MAS-TL-E datasheet, PDF - EEWORLD Datasheet

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BB501MAS-TL-E: DescriptionBuilt in Biasing Circuit MOS FET IC UHF RF Amplifier; CategoryDiscrete semiconductor The transistor; File Size295KB，11 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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BB501MAS-TL-E Overview

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB501MAS-TL-E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOT-143
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (Abs) (ID)	0.02 A
Maximum drain current (ID)	0.02 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
Minimum power gain (Gp)	17 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BB501M

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

REJ03G0831-0600

(Previous ADE-208-700D)

Rev.6.00

Aug.10.2005

Features

•

Built in Biasing Circuit; To reduce using parts cost & PC board space.

•

High gain;

PG = 21.5 dB typ. at f = 900 MHz

•

Low noise;

NF = 1.85 dB typ. at f = 900 MHz

•

Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•

Provide mini mold packages; MPAK-4(SOT-143Rmod)

Outline

RENESAS Package code: PLSP0004ZA-A

(Package name: MPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

Notes:

1. Marking is “AS –”.

2. BB501M is individual type number of RENESAS BBFET.

Rev.6.00 Aug 10, 2005 page 1 of 10

BB501MAS-TL-E Related Products

	BB501MAS-TL-E	BB501M
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Parts packaging code	SOT-143	SOT-143
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	6 V	6 V
Maximum drain current (Abs) (ID)	0.02 A	0.02 A
Maximum drain current (ID)	0.02 A	0.02 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	17 dB	17 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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