BCR8CM-12LA
Triac
Medium Power Use
REJ03G0295-0300
Rev.3.00
Nov 30, 2007
Features
•
I
T (RMS)
: 8 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
•
Non-Insulated Type
•
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
12
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
REJ03G0295-0300
Page 1 of 6
Rev.3.00
Nov 30, 2007
BCR8CM-12LA
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 105°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz,surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
2.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 12 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
≤
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
REJ03G0295-0300
Page 2 of 6
Rev.3.00
Nov 30, 2007
BCR8CM-12LA
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
Tj = 125°C
Tj = 25°C
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10V
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Typical Example
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
I
RGT III
V
GT
= 1.5V
I
RGT I
, I
FGT I
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–
60
–
40
–
20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G0295-0300
Page 3 of 6
Rev.3.00
Nov 30, 2007
BCR8CM-12LA
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Curves apply regardless
of conduction angle
Case Temperature (°C)
120
100
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
2
4
6
8
0
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
120
100
80
60
40
20
0
0
2
4
6
Ambient Temperature (°C)
All fins are black painted
140
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
8
10
12
14
16
140
120
100
80
60
40
20
0
0
0.5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
3
2
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
7
Typical Example
5
Typical Example
10
4
7
5
3
2
10
2
7
5
4
3
2
10
3
7
5
3
2
10
2
-60 -40 -20 0 20 40 60 80 100 120 140
10
1
–
60
–
40
–
20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
REJ03G0295-0300
Page 4 of 6
Rev.3.00
Nov 30, 2007
BCR8CM-12LA
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
160
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100120 140
Typical Example
Latching Current (mA)
Distribution
10
2
7
5
3
2
T
2
+, G–
Typical Example
10
1
7
5
3
2
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
10
0
–
40
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Typical Example
Tj = 125°C
III Quadrant
7
5
3
2
10
1
7
5
3
2
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
100
80
60
40
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
0
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Rise of Off-State Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
Typical Example
I
FGT I
I
RGT I
I
RGT III
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
2 3 4 5 7 10
1
2 3 4 5 7 10
2
A
V
330Ω
Gate Current Pulse Width (µs)
Test Procedure III
REJ03G0295-0300
Page 5 of 6
Rev.3.00
Nov 30, 2007
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