BCR8PM-12LE
Triac
Medium Power Use
REJ03G1259-0100
Rev.2.00
Jul 28, 2006
Features
•
•
•
•
I
T (RMS)
: 8 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGTIII
: 30 mA
Viso : 1500 V
•
Insulated Type
•
Planar Passivation Type
•
UL Applying
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
700
Unit
V
V
Rev.2.00
Jul 28, 2006
page 1 of 7
BCR8PM-12LE
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 82°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
Min.
—
—
—
—
—
—
—
—
0.2
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
4.3
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 12 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
(dv/dt)c
10
—
—
V/µs
Tj = 125°C
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
Rev.2.00
Jul 28, 2006
page 2 of 7
BCR8PM-12LE
Performance Curves
Maximum On-State Characteristics
10
7
5
3
2
10
1
7
5
3
2
10
7
5
3
2
10
–1
0
2
Rated Surge On-State Current
100
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
0
10
2 3
5 7 10
1
On-State Current (A)
Tj = 125°C
Tj = 25°C
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
2 3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10 V
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
I
RGT III
Typical Example
P
G(AV)
= 0.5 W
P
GM
= 5 W
I
GM
= 2 A
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
V
GT
= 1.5 V
10
2
I
RGT I
, I
FGT I
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140
V
GD
= 0.2 V
10
–1
7
5
10
1
2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
I
FGT I
I
RGT I
, I
RGT III
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140
1
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 710
3
2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
3
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
Rev.2.00
Jul 28, 2006
page 3 of 7
BCR8PM-12LE
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (°C/W)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
–1
10
1
On-State Power Dissipation (W)
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10 12 14 16
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
2
3
4
5
Conduction Time (Cycles at 60 Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Allowable Ambient Temperature vs.
RMS On-State Current
160
All fins are black painted
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Ambient Temperature (°C)
Case Temperature (°C)
140
120
100
80
60
40
140
120
100
80
60
40
20
0
0
2
4
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
5
3
2
10
4
7
5
3
2
10
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140
2
3
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Junction Temperature (°C)
Rev.2.00
Jul 28, 2006
page 4 of 7
BCR8PM-12LE
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140
Typical Example
10
3
7
5
3
2
10
2
7
5
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
1
7
5
3
+ +
2 T
2
–, G– Typical Example
T
2
, G
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Typical Example
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
0
1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
7
5
3
2
1
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
7
5
3
2
10
2
7
5
3
2
10
0
10
1
3
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
7
5
Minimum
Characteristics
3
2
Value
Typical Example
Tj = 125°C
I
T
= 4 A
τ
= 500
µs
V
D
= 200 V
f = 3 Hz
Typical Example
I
FGT I
I
RGT I
I
RGT III
I Quadrant
III Quadrant
10
0
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Rev.2.00
Jul 28, 2006
page 5 of 7
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