FX50KMJ-2
High-Speed Switching Use
Pch Power MOS FET
REJ03G1452-0200
(Previous: MEJ02G0284-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
•
Drive voltage : 4 V
V
DSS
: –100 V
r
DS(ON) (max)
: 50 mΩ
I
D
: –50 A
Integrated Fast Recovery Diode (TYP.) : 100 ns
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
3
1
1. Gate
2. Drain
3. Source
1
2
3
2
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
Viso
—
Ratings
–100
±20
–50
–200
–50
–50
–200
35
– 55 to +150
– 55 to +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 30
µH
AC for 1 minute,
Terminal to case
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
FX50KMJ-2
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
R
th(ch-c)
t
rr
Min
–100
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
–1.8
39
47
–0.98
49.2
11130
896
480
57
118
828
380
–1.0
—
100
Max
—
±0.1
–0.1
–2.3
50
61
–1.25
—
—
—
—
—
—
—
—
–1.5
3.57
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test Conditions
I
D
= –1 mA, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= –100 V, V
GS
= 0 V
I
D
= –1 mA, V
DS
= –10 V
I
D
= –25 A, V
GS
= –10 V
I
D
= –25 A, V
GS
= – 4 V
I
D
= –25 A, V
GS
= –10 V
I
D
= –25 A, V
DS
= –10 V
V
DS
= –10 V, V
GS
= 0 V,
f = 1MHz
V
DD
= –50 V, I
D
= –25 A,
V
GS
= –10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= –25 A, V
GS
= 0 V
Channel to case
I
S
= –50 A, d
is
/d
t
= 100 A/µs
Rev.2.00
Aug 07, 2006
page 2 of 6
FX50KMJ-2
Performance Curves
Power Dissipation Derating Curve
50
–3
–2
Maximum Safe Operating Area
tw =
10µs
Power Dissipation P
D
(W)
Drain Current I
D
(A)
40
–10
2
–7
–5
–3
–2
100µs
1ms
30
–10
1
–7
–5
–3
–2
20
Tc = 25°C
Single Pulse
10
–10
0
–7
–5
DC
0
0
50
100
150
200
–3
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
–100
V
GS
=
–10V
–8V
–6V
–5V
Tc = 25°C
Pulse Test
Output Characteristics (Typical)
–50
V
GS
=
–10V
–4V
–8V
–6V
–5V
–3V
Tc = 25°C
Pulse Test
Drain Current I
D
(A)
–60
Drain Current I
D
(A)
–80
–40
–4V
–30
–40
–3V
–20
–20
P
D
= 35W
–10
P
D
= 35W
0
0
–2
–4
–6
–8
–10
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Resistance r
DS(ON)
(mΩ)
Drain-Source On-State Voltage V
DS(ON)
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
On-State Resistance vs.
Drain Current (Typical)
100
Tc = 25°C
Pulse Test
–8
80
–6
I
D
= –100A
60
V
GS
= –4V
–4
–50A
–25A
40
–10V
–2
20
Tc = 25°C
Pulse Test
0
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
–10
2
0
0
–2
–4
–6
–8
–10
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00
Aug 07, 2006
page 3 of 6
FX50KMJ-2
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Forward Transfer Admittance | yfs | (S)
–100
10
2
7
5
3
2
T
C
=
25°C 75°C
125°C
Drain Current I
D
(A)
–80
–60
10
1
7
5
3
2
–40
V
DS
= –10V
Pulse Test
–20
Tc = 25°C
V
DS
= –10V
Pulse Test
0
–2
–4
–6
–8
–10
0
10
0 0
–10
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
–10
2
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
Ciss
2
Drain Current I
D
(A)
Switching Characteristics (Typical)
10
4
10
3
t
d(off)
Capacitance C (pF)
7
5
3
2
Tch = 25°C
f = 1MHz
V
GS
= 0V
Switching Time (ns)
7
5
3
2
t
f
10
3
7
5
3
2
Coss
10
2
7
5
3
Tch = 25°C
V
GS
= –10V
V
DD
= –50V
R
GEN
= R
GS
= 50Ω
t
r
t
d(on)
Crss
–3 –5 –7
–10
0
–2 –3 –5 –7
–10
1
–2 –3 –5 –7
–10
2
–2 –3
2
–7
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
–100
Drain Current I
D
(A)
Source-Drain Diode Forward
Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
–8
V
DS
=
–
20V
Source Current I
S
(A)
–80
T
C
=
25°C
–6
–60
75°C
–
40V
–4
–
80V
125°C
–40
–2
Tch = 25°C
I
D
= –50A
–20
V
GS
= 0V
Pulse Test
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
0
40
80
120
160
200
0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.2.00
Aug 07, 2006
page 4 of 6
FX50KMJ-2
On-State Resistance vs.
Channel Temperature (Typical)
10
1
7
5
3
2
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Threshold Voltage vs.
Channel Temperature (Typical)
–4.0
V
GS
= –10V
I
D
= –25A
Pulse Test
V
DS
= –10V
I
D
= –1mA
–3.2
–2.4
10
0
7
5
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
10
1
7
5
3
2
D = 1.0
0.5
0.2
0.1
0.05
P
DM
tw
V
GS
= 0V
I
D
= –1mA
1.2
10
0
7
5
3
2
1.0
0.8
10
–1
7
5
3
2
0.02
0.01
Single Pulse
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin
Vin Monitor
D.U.T.
R
GEN
R
L
Vout
Monitor
Switching Waveform
10%
90%
90%
90%
R
GS
V
DD
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00
Aug 07, 2006
page 5 of 6
京公网安备 11010802033920号
EEWORLD
