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HAT2053M-EL-E

Description
Silicon N Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size49KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HAT2053M-EL-E Overview

Silicon N Channel Power MOS FET Power Switching

HAT2053M-EL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-95
package instructionMODIFIED SC-95, TSOP-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)6.1 A
Maximum drain current (ID)6.1 A
Maximum drain-source on-resistance0.048 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.05 W
Maximum pulsed drain current (IDM)24.4 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
HAT2053M
Silicon N Channel Power MOS FET
Power Switching
REJ03G1172-0500
(Previous: ADE-208-755C)
Rev.5.00
Sep 07, 2005
Features
Low on-resistance
Low drive current
High density mounting
2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A
(Package name: TSOP-6)
1 2 5 6
D D D
D
4
3
6
5
3
G
1
2
4
3
1, 2, 5, 6
Source
Gate
Drain
S
4
Rev.5.00 Sep 07, 2005 page 1 of 3

HAT2053M-EL-E Related Products

HAT2053M-EL-E HAT2053M
Description Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code SC-95 TSOP
package instruction MODIFIED SC-95, TSOP-6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (Abs) (ID) 6.1 A 6.1 A
Maximum drain current (ID) 6.1 A 6.1 A
Maximum drain-source on-resistance 0.048 Ω 0.048 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.05 W 1.05 W
Maximum pulsed drain current (IDM) 24.4 A 24.4 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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