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HAT2089R-EL-E

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size50KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HAT2089R-EL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

HAT2089R-EL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOP
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging codePRSP0008DD-D8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
HAT2089R
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1184-0200
(Previous: ADE-208-1235)
Rev.2.00
Sep 07, 2005
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
12
34
4
G
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
S S S
1 2 3
Rev.2.00 Sep 07, 2005 page 1 of 3

HAT2089R-EL-E Related Products

HAT2089R-EL-E HAT2089R
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Parts packaging code SOP SOT
package instruction SMALL OUTLINE, R-PDSO-G8 FP-8DA, SOP-8
Contacts 8 8
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (Abs) (ID) 2 A 2 A
Maximum drain current (ID) 2 A 0.002 A
Maximum drain-source on-resistance 0.6 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8
Number of components 1 1
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2.5 W 2.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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