HAT2132H
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0177-0300
Rev.3.00
Dec 07, 2006
Features
•
Low drive current.
•
Low on-resistance
•
Low profile
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK )
5
D
5
4
4
G
3
12
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
DR(pulse) Note1
I
AP Note3
E
AR Note3
Pch
Note2
θch-c
Tch
Tstg
Note1
Ratings
200
±30
6
24
6
24
6
2.4
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Dec 07, 2006 page 1 of 6
HAT2132H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
200
—
—
3.0
2.7
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.7
0.36
450
65
13
19
26
48
9
12.5
2.5
6
0.85
95
Max
—
1
±0.1
4.0
—
0.45
—
—
—
—
—
—
—
—
—
—
1.30
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A, V
DS
= 10 V
Note4
I
D
= 3 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 3 A
V
GS
= 10 V
R
L
= 33.3
Ω
Rg = 10
Ω
V
DD
= 160 V
V
GS
= 10 V
I
D
= 6 A
I
F
= 6 A, V
GS
= 0
Note4
I
F
= 6 A, V
GS
= 0
di
F
/dt = 100 A/µs
Rev.3.00 Dec 07, 2006 page 2 of 6
HAT2132H
Main Characteristics
Power vs. Temperature Derating
40
100
30
10
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
10
3
1
0.3
0.1
0.03
10
1
PW
=
10
0
µ
s
µ
s
m
s
Channel Dissipation
Drain Current
20
10
Operation in
this area is
limited by R
DS (on)
C
(T Op
c era
=
25 tion
°C
)
D
1
s(
m
)
ot
Sh
0
0
50
100
150
200
Ta = 25°C
0.01
0.1 0.3 1
3
10 30
100 300 1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
10
10 V
10
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
(A)
(A)
I
D
6V
8V
8
6.5 V
Pulse Test
8
I
D
6
6
Drain Current
4
5.5 V
2
V
GS
= 5 V
0
0
4
8
12
16
20
Drain Current
4
Tc = 75°C
25°C
–25°C
0
0
2
4
6
8
10
2
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
8
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(Ω)
10
Pulse Test
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
10
6
I
D
= 8 A
5A
2A
0
0
4
8
12
16
20
2
1
0.5
V
GS
= 10 V, 15 V
4
2
0.2
0.1
0.1 0.2 0.5 1
2
5 10 20
50 100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.3.00 Dec 07, 2006 page 3 of 6
HAT2132H
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance |yfs| (S)
2.5
V
GS
= 10 V
Pulse Test
2.0
100
V
DS
= 10 V
Pulse Test
30
Tc = –25°C
10
3
1
0.3
0.1
0.1
1.5
I
D
= 8 A
5A
25°C
75°C
1.0
0.5
2A
0
–40
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature
Tc
(
°
C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
V
GS
= 0
f = 1 MHz
Ciss
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
1000
500
200
100
50
20
10
5
0
20
40
60
80
100
Crss
Coss
200
100
50
20
10
0.1
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
V
GS
(V)
400
I
D
= 6 A
V
DD
= 50 V
100 V
160 V
V
GS
16
1000
300
100
30
10
3
1
0.1
td(on)
tr
tf
V
GS
= 10 V, V
DD
= 100 V
PW = 10
µs,
duty
≤
1 %
Rg = 10
Ω
td(off)
300
12
Drain to Source Voltage
200
V
DS
8
100
V
DD
= 160 V
100 V
50 V
0
20
40
60
80
4
0
0
100
Gate to Source Voltage
Switching Time t (ns)
0.2
0.5
1
2
5
10
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.3.00 Dec 07, 2006 page 4 of 6
HAT2132H
Reverse Drain Current vs.
Source to Drain Voltage
10
Gate to Source Cutoff Voltage V
GS (off)
(V)
Gate to Source Cutoff Voltage vs.
Case Temperature
5
V
DS
= 10 V
I
D
= 10 mA
1 mA
Reverse Drain Current I
DR
(A)
8
4
6
3
0.1 mA
4
10 V
5V
V
GS
= 0
2
2
1
Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
0
–40
0
40
80
120
160
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 6.25°C/W, Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.05
0.03
0.02
1
0.0
ho
1s
u
tp
lse
0.01
10
µ
100
µ
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10
Ω
D.U.T.
R
L
Vout
Monitor
Vin
Vout
10%
10%
90%
10%
Vin
10 V
V
DD
= 100 V
td(on)
90%
tr
90%
td(off)
tf
Rev.3.00 Dec 07, 2006 page 5 of 6
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