HY5V66FLF6P-H datasheet, PDF - EEWORLD Datasheet

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HY5V66FLF6P-H: DescriptionSynchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60; Categorystorage storage; File Size1MB，13 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5V66FLF6P-H Overview

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60

HY5V66FLF6P-H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	TFBGA, BGA60,7X15,25
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	10.1 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	60
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,7X15,25
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.1 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.65 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	6.4 mm
Base Number Matches	1

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

Document Title

4Bank x 1M x 16bits Synchronous DRAM

Revision History

Revision No.

0.1

1.0

History

Initial Draft

Final Version

Draft Date

Jan. 2007

Apr. 2007

Remark

Preliminary

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 1.0 / Apr. 2007

HY5V66FLF6P-H Related Products

	HY5V66FLF6P-H	HY5V66FF6P-7	HY5V66FF6P-H	HY5V66FF6P-6	HY5V66FLF6P-6	HY5V66FLF6P-5	HY5V66FLF6P-7	HY5V66FLF6P-P	HY5V66FF6P-5	HY5V66FF6P-P
Description	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, LEAD FREE, FBGA-60	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25	TFBGA, BGA60,7X15,25
Contacts	60	60	60	60	60	60	60	60	60	60
Reach Compliance Code	compliant	unknown	unknown	unknown	compliant	compliant	compliant	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	4.5 ns	5.5 ns	5.5 ns	4.5 ns	5.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	143 MHz	133 MHz	166 MHz	166 MHz	200 MHz	143 MHz	100 MHz	200 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
JESD-609 code	e1	e1	e1	e1	e1	e1	e1	e1	e1	e1
length	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	60	60	60	60	60	60	60	60	60	60
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25	BGA60,7X15,25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096	4096	4096
Maximum seat height	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.18 mA	0.18 mA	0.18 mA	0.195 mA	0.195 mA	0.21 mA	0.18 mA	0.18 mA	0.21 mA	0.18 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20	20	20	20	20	20	20
width	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm	6.4 mm
Maker	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix

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