BCR25KM-12LB
Triac
Medium Power Use
REJ03G1676-0100
Rev.1.00
Jun 05, 2008
Features
•
•
•
•
I
T (RMS)
: 25 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGTIII
: 50 mA
V
iso
: 2000 V
•
Insulated Type
•
Planar Type
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Note1
Non-repetitive peak off-state voltage
Notes: 1. Gate open.
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
REJ03G1676-0100
Page 1 of 7
Rev.1.00
Jun 05, 2008
BCR25KM-12LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Ratings
25
250
313
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave 360°
conduction, Tc = 62°C
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
50Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0/5.0
1.5
2.0
2.0
2.0
50
50
50
—
2.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 125/150°C, V
DRM
applied
Tc = 25°C, I
TM
= 40 A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125/150°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125/150°C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Main Current
Main Voltage
(dv/dt)c
Time
V
D
REJ03G1676-0100
Page 2 of 7
Rev.1.00
Jun 05, 2008
BCR25KM-12LB
Performance Curves
Maximum On-State Characteristics
10
3
400
Rated Surge On-State Current
Surge On-State Current (A)
3.5
On-State Current (A)
300
10
2
Tj = 150°C
200
10
1
Tj = 25°C
100
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
V
GM
= 10 V
P
G(AV)
=
0.5 W
P
GM
= 5 W
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
10
1
7
5
V
GT
= 2.5 V
3
2
10
0
7
5
3
2
I
GM
= 2 A
10
2
I
FGT I
I
RGT I
I
RGT III
10
–1
I
FGT I
, I
RGT I
, I
RGT III
7
5
10
1
2 3 5 7 10
2
2 3
V
GD
= 0.1 V
5 710
3
2 3
5 710
4
10
1
-40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4
10
3
10
4
10
5
3
10
2
2
1
10
1
-40
0
40
80
120
160
0
10
-1
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G1676-0100
Page 3 of 7
Rev.1.00
Jun 05, 2008
BCR25KM-12LB
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
30
Case Temperature (°C)
Curves apply
regardless of
conduction angle
120
100
80
60
40
20
10
360° Conduction
Resistive,
inductive loads
0
0
10
20
30
40
360° Conduction
20
Resistive,
inductive loads
0
0
10
20
30
40
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160 160 t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
60
40
20
0
0
10
Ambient Temperature (°C)
140
120 120 t2.3
100 100 t2.3
140
120
100
80
60
40
20
0
0
1
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
20
30
40
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
3
Typical Example
10
5
10
2
10
4
10
3
10
1
-40
0
40
80
120
160
10
2
-40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
REJ03G1676-0100
Page 4 of 7
Rev.1.00
Jun 05, 2008
BCR25KM-12LB
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
3
Latching Current vs.
Junction Temperature
Latching Current (mA)
Distribution
10
2
T
2+
, G
–
Typical
Example
10
2
10
1
T
2–
, G
–
Typical
Example
T
2+
, G
+
Typical
Example
10
1
-40
0
40
80
120
160
10
0
-40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
10
3
10
4
III Quadrant
Typical Example
Tj = 150°C
10
3
10
4
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
I Quadrant
10
1
10
1
III Quadrant
I Quadrant
Minimum
Characteristics
Value
III Quadrant
Minimum
Characteristics
Value
10
0
10
1
10
2
10
3
10
0
10
0
10
1
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1676-0100
Page 5 of 7
Rev.1.00
Jun 05, 2008
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