PHOTODIODE
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
Quadrant photodiode / plastic package
These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk.
S7547 is specifically developed for violet laser detection, providing greatly improved sensitivity at
λ=410
nm.
Custom-designed devices (with different element shapes, number of elements, characteristics and packages) are also available to meet your
specific needs. Feel free to contact our sales office.
Features
Applications
l
Clear plastic package (4 × 4.8 mm)
l
High sensitivity
l
Uniform element characteristic
l
Low cross-talk
l
Low noise
l
Signal readout for CD, DVD and MO (Magneto Optical) disc
l
Laser beam alignment
l
Position detection, etc.
l
Violet laser detection (S7547)
l
Optical disc (DVD, etc.) pickup using violet laser (S7547)
s
General ratings / Absolute maximum ratings
Dimensional
outline
➀
➁
➂
Active
area
(mm)
φ1.0/4
element
2.0 × 2.0/4 element
0.6 × 1.2/4 element
Elements gap
(µm)
20
15
10
Absolute maximum ratings
Operating
Storage
Reverse voltage
temperature
temperature
V
R
Max.
Topr
Tstg
(V)
(°C)
(°C)
Type No.
S7379-01
S6695-01
S6058
S7547
20
-25 to +85
-40 to +100
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)
Peak
Spectral
sensitivity Photo sensitivity
response
range wavelength
S
λp
λ
λ=λp
(A/W)
0.55
0.65
0.55
0.5
λ=410
nm
(A/W)
0.19
0.18
0.21
0.27
Dark current
I
D
V
R
=10 V
All elements
Typ.
(nA)
0.04
0.1 *
1
0.04 *
2
0.01 *
2
Max.
(nA)
0.2
1 *
1
0.2 *
2
0.2 *
2
Temp.
coefficient
of
I
D
T
CID
(times/°C)
1.15
Cut-off
Terminal
frequency
capacitance
fc
Ct
V
R
=10 V
V
R
=10 V
R
L
=50
Ω
f=1 MHz
λ=830
nm
(MHz)
80
40 *
1
150 *
2
500 *
2
(pF)
1
3 *
1
1 *
2
2 *
2
NEP
V
R
=10 V
Type No.
S7379-01
S6695-01
S6058
S7547
*1: V
R
=5 V
*2: V
R
=3 V
(nm)
320 to
1060
320 to
1000
(nm)
900
800
760
(W/Hz
1/2
)
6.5 ×10
-15
8.7 ×10
-15
*
1
6.5 ×10
-15
*
2
3.6 ×10
-15
*
2
1
Si PIN photodiode
s
Spectral response
S7379-01, S6695-01, S6058, S7547
s
Photo sensitivity temperature characteristics
(Typ. Ta=25 ˚C)
0.7
0.6
QE=100 %
S6058
0.5
S7547
0.4
0.3
S7379-01
+1.5
(Typ. )
TEMPERATURE COEFFICIENT (%/ ˚C)
S6695-01
PHOTO SENSITIVITY (A/W)
+1.0
S6058
S7547
+0.5
S7379-01, S6695-01
0
0.2
0.1
0
200
400
600
800
1000
-0.5
200
400
600
800
1000
WAVELENGTH (nm)
KMPDB0145EA
WAVELENGTH (nm)
KMPDB0146EA
s
Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
1 nA
s
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
100 pA
TERMINAL CAPACITANCE
S6695-01
DARK CURRENT
10 pF
S6695-01
S7547
S7379-01
1 pF
S6058
S6058
10 pA
S7379-01
S7547
1 pA
100 fA
0.01
0.1
1
10
100
100 fF
0.1
1
10
100
REVERSE VOLTAGE (V)
KMPDB0147EA
REVERSE VOLTAGE (V)
KMPDB0148EA
2
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
s
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1)
➀
S7379-01
4.1 ± 0.2 ACTIVE AREA
(INCLUDING BURR)
0.5
0.4
5.0 ± 0.2
(INCLUDING BURR)
1.27 1.27 1.27
a d
b c
4.7 *
(0.8)
3.4 ± 0.4
(1.25)(1.25)
4.0 *
(0.8)
3.4 ± 0.4
10.8 ± 0.3
0.3 MAX
PHOTOSENSITIVE
SURFACE
0.8
(2 ×) 10˚
1.0
0.02
(2 ×) 10˚
(2 ×) 5˚
4.8 *
a
b
d
c
0.3 MAX
(2 ×) 5˚
DETAILS OF PHOTODIODE
0.25
NC
ANODE a
ANODE b
CATHODE COMMON
NC
ANODE c
ANODE d
CATHODE COMMON
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
0.02
1.8
KMPDA0137EA
➁
S6695-01
4.1 ± 0.2
(INCLUDING BURR)
0.5
5.0 ± 0.2
(INCLUDING BURR)
1.27 1.27
a d
b c
4.7 *
(2 ×) 10˚
1.5 ± 0.4
4.0 *
1.5 ± 0.4
7.0 ± 0.3
0.7 ± 0.3
(2 ×) 10˚
0.25
(2 ×) 5˚
4.8 *
a
1.8
d
c
0.015
2.0
0.015
2.0
0.7 ± 0.3
PHOTOSENSITIVE
SURFACE
0.5
0.8
ELECTRODE
b
(2 ×) 5˚
ANODE a
CATHODE COMMON
ANODE b
ANODE c
CATHODE COMMON
ANODE d
0.1 ± 0.1
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
KMPDA0121EA
3
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
➂
S6058, S7547
4.1 ± 0.2 ACTIVE AREA
(INCLUDING BURR)
0.5
0.4
b c
4.7 *
(0.8)
3.4 ± 0.4
(1.25)(1.25)
4.0 *
(0.8)
3.4 ± 0.4
(2 ×) 10˚
10.8 ± 0.3
(2 ×) 10˚
PHOTOSENSITIVE
SURFACE
(2 ×) 5˚
ELECTRODE
4.8 *
a d
5.0 ± 0.2
(INCLUDING BURR)
1.27 1.27 1.27
0.8
a
d
c
0.01
0.01
1.8
b
(2 ×) 5˚
NC
ANODE a
ANODE b
CATHODE COMMON
NC
ANODE c
ANODE d
CATHODE COMMON
0.6
0.25
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
1.2
KMPDA0007EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KMPD1053E04
Sep. 2001 DN
stm32/stm8
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