Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812
Features
•
•
Low-Frequency General-Purpose
Amplifier Applications
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Specifications
( ) : 2SA1179
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
(--)55
(--)50
(--)5
(--)150
(--)300
(--)30
200
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=(--)35V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)6V, IC=(-
-)1mA
2SC2812 : VCE=6V, IC=1mA
2SA1179 : VCE=-
-6V, IC=--10mA
135*
100
(180)
Ratings
min
typ
max
(--)0.1
(--)0.1
600*
MHz
MHz
Unit
μA
μA
Marking: 2SA1179: M / 2SC2812: L
*:
The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws:
Rank
5
6
7
hFE
135 to 270
200 to 400
300 to 600
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5
2SA1179 / 2SC2812
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCB=(-
-)6V, f=1MHz
IC=(--)50mA, IB=(--)5mA
IC=(--)50mA, IB=(--)5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
(--)55
(--)50
(--)5
Ratings
min
typ
(4.0)3.0
(--0.15)0.1
(-
-)0.5
(-
-)1.0
max
Unit
pF
V
V
V
V
V
Package Dimensions
unit : mm (typ)
7013A-009
0.5
2.9
0.1
3
2.5
1.5
0.5
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.05
1.1
0.3
--16
IC -- VCE
2SA1179
Collector Current, IC -- mA
20
IC -- VCE
50
μ
A
45
μ
A
40
μ
A
2SC2812
Collector Current, IC -- mA
--12
μ
A
--50
A
--45
μ
A
--40
μ
A
--35
μ
--30
μ
A
--25
μ
A
--20
μ
A
--15
μ
A
--10
μA
16
35
μ
A
12
30
μ
A
25
μA
--8
8
20
μA
15μA
4
--4
--5μA
0
0
--10
--20
--30
10μA
5μA
IB=0μA
40
50
IT12001
IB=0μA
--40
--50
IT12000
0
0
10
20
30
Collector-to-Emitter Voltage, VCE -- V
--240
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
240
IC -- VBE
2SA1179
VCE=
--6V
--200
200
2SC2812
VCE=6V
Collector Current, IC -- mA
Collector Current, IC -- mA
--160
160
Ta=75
°
C
25
°
C
--25
°
C
--120
120
--80
80
--40
40
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT12002
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT12003
Base-to-Emitter Voltage, VBE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=75
°
C
25
°
C
--25
°
C
No.3218-2/5
2SA1179 / 2SC2812
2
hFE -- IC
2SA1179
VCE=
--6V
3
2
hFE -- IC
2SC2812
VCE=6V
1000
DC Current Gain, hFE
7
5
DC Current Gain, hFE
1000
7
5
3
2
3
2
Ta=75°C
25°C
--25°C
Ta=75°C
25
°C
--25°C
100
7
5
--0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
5 7--100 2 3
IT12004
100
7
5
0.1
2 3
5
1.0
2 3
5
10
2 3
5
2 3
100
IT12005
Collector Current, IC -- mA
1000
f T -- IC
Collector Current, IC -- mA
1000
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5
3
2
Gain-Bandwidth Product, f T -- MHz
7
2SA1179
VCE=
--6V
7
5
3
2
2SC2812
VCE=6V
100
7
5
3
2
--1.0
100
7
5
3
2
1.0
2
3
5
7
2
3
5
7 100
2
3
2
3
5
7 --10
2
3
5
7 --100
2
3
5
10
Collector Current, IC -- mA
2
IT12006
2
Cob -- VCB
Collector Current, IC -- mA
IT12007
Cob -- VCB
2SA1179
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
10
7
5
3
2
10
7
5
3
2
2SC2812
f=1MHz
1.0
7
5
3
2
1.0
7
5
3
5
7 --1.0
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
--1.0
7
7 --100
IT12008
3
5
7
1.0
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
100
IT12009
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
2SA1179
IC / IB=10
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
1.0
2SC2812
IC / IB=10
--0.1
7
5
3
2
--0.01
--1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
5
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
IT12010
Collector Current, IC -- mA
IT12011
No.3218-3/5
2SA1179 / 2SC2812
2
10
hie, hre, hfe, hoe -- VCE
ho
e
hfe
2
10
5
3
2
hie, hoe -- IC
2SC2812
f=1MHz
5
3
5
3
5
hfe --
✕10
hre --
✕10
4
hie -- kΩ
hoe --
μS
2
1.0
2
1.0
10
7
5
3
2
10
7
5
3
2
V
hr
e
5
3
2
0.1
5
5
2SA1179
f=270MHz
IC= --1mA
7
--1.0
2
3
5
7
--10
2
3
3
2
0.1
IT12012
5
3
1.0
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Emitter Voltage, VCE -- V
5
3
2
10
hie, hre, hfe, hoe -- IC
hi
e
Collector Current, IC -- mA
5
3
2
1.0
10
IT12013
7
5
hre, hfe -- IC
2
h oe
10
5
3
2
hfe
hr
eV
CE
=3
V
6V
2SC2812
3
=3V, 6V
h fe V CE
2
hfe --
✕10
hre --
✕10
4
hre --
✕10
4
5
hie -- kΩ
hoe --
μS
1.0
7
5
3
2
100
7
5
3
2
2
1.0
5
3
2
0.1
5
hr
e
1.0
5
2SA1179
f=270MHz
VCE= --6V
7
--0.1
2
3
5
7
--1.0
2
3
3
2
0.1
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
250
IT12014
PC -- Ta
Collector Current, IC -- mA
10
10
IT12015
7
2SA1179 / 2SC2812
Collector Dissipation, PC -- mW
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
IT12016
No.3218-4/5
hfe
3
hoe --
μS
hie -- kΩ
hie
3
hi
eV
CE
=3
V,
6
h oe
V
=3
E
C
V
2
6V
2SA1179 / 2SC2812
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No.3218-5/5
Microcontroller MCU
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