ZXTN25012EZ
12V NPN high gain transistor in SOT89
Summary
BV
CEO
> 12V
BV
ECX
> 6V
h
FE
> 500
I
C(cont)
= 6.5A
V
CE(sat)
< 38mV @ 1A
R
CE(sat)
= 25m
P
D
= 2.4W
Complementary part number ZXTP25012EZ
Description
Packaged in the SOT89 outline this new ultra high gain, low saturation
12V NPN transistor offers extremely low on state losses making it ideal
for use in DC-DC circuits and various driving and power management
functions
C
B
Features
•
•
•
•
6.5A continuous current
Up to 15A peak current
Very low saturation voltages
6V reverse blocking voltage
E
Applications
•
•
•
•
•
•
LED driving
Motor driving
Boost converters
Royer converters
Camera strobe
MOSFET gate drivers
E
C
C
B
Pinout - top view
Ordering information
Device
ZXTN25012EZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Device marking
1K7
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTN25012EZ
Absolute maximum and thermal ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Collector voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current
(c)
Base current
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(c)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Power dissipation at T
C
=25°C
(e)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECX
V
EBO
I
C
I
B
I
CM
P
D
Limit
20
12
6
7
6.5
1
15
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
19.2
153
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Junction to case
(e)
Symbol
R
JA
R
JA
R
JA
R
JA
R
JC
Limit
117
68
51
28
7.95
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXTN25012EZ
Thermal characteristics
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
ZXTN25012EZ
Thermal characteristics
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXTN25012EZ
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Collector-Emitter cut-off
current
Emitter cut-off current
Collector-Emitter
saturation voltage
Symbol
BV
CBO
BV
CEO
BV
ECX
Min.
20
12
6
Typ.
40
17
8
Max.
Unit
V
V
V
Conditions
I
C
= 100μA
I
C
= 10mA
(*)
I
E
= 100mA, R
BC
< 1kΩ
or
0.25V > V
BC
> -0.25V
I
E
= 100μA
BV
ECO
4.5
5.5
V
BV
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
7
8.3
<1
50
0.5
100
<1
31
50
70
90
200
950
840
50
38
60
85
130
270
1050
950
1500
V
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
mV
I
E
= 100μA
V
CB
= 20V
V
CB
= 20V, T
amb
= 100°C
V
CE
= 20V, R
BE
< 1kΩ or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 2A, I
B
= 20mA
(*)
I
C
= 6.5A, I
B
= 130mA
(*)
I
C
= 6.5A, I
B
= 130mA
(*)
I
C
= 6.5A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 6.5A, V
CE
= 2V
(*)
I
C
= 15A, V
CE
= 2V
(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
500
500
185
30
800
750
250
50
260
137
25
71
70
233
72
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
MHz
250
35
pF
pF
ns
ns
ns
ns
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
EB
= 0.5V, f = 1MHz
(*)
V
CB
= 10V, f = 1MHz
(*)
I
C
= 1A, V
CC
= 10V,
I
B1
=-I
B2
= 10mA
NOTES:
(*)
Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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