HUF75639S3 datasheet, PDF - EEWORLD Datasheet

HUF75639S3: DescriptionPower Field-Effect Transistor, 53A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size414KB，13 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

Download Datasheet Parametric View All

HUF75639S3 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	HUF75639S3	-	-	View	Buy Now

Power Field-Effect Transistor, 53A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	53 A
Maximum drain current (ID)	53 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

【Recruitment】Jinan High-tech Zone Integrated Circuit Company Recruitment: Please send your resume to yunxin_ic@163.com ---------------------------------------------------------- RF/Analog Circuit Design Engineer (2 persons) Job Description1. Responsible for the design of RF...; uwb11n Recruitment

EEWORLD DIY——My Health Bracelet (V) Completed: [i=s]This post was last edited by ketose on 2017-12-10 20:02[/i] [size=5]After a period of hard work, the last update, adding the power display, my health bracelet has been initially completed, basica...; ketose DIY/Open Source Hardware

TI Audio and Haptic Vibration Technology Innovation Workshop - Registration is now open!: [font=微软雅黑][size=3]In the hot summer, Texas Instruments (TI) will focus on South China and hold the "Audio and Haptic Vibration Technology Innovation Seminar" in Shenzhen, Dongguan, Guangzhou and Zhuh...; EEWORLD社区 TI Technology Forum

[urgent! ! ! ] How could this happen?: The code is as follows: BYTE *buf=NULL; int bufLen = m_strSend.GetLength(); CString str; str.Format(L"%ld",bufLen); MessageBox(str,_T("OK")); MessageBox(m_strSend, _T("ok")); buf = new BYTE[bufLen+1];...; SDFSADFSAD Embedded System

Research and design of reversing radar system (report + code).: [i=s]This post was last edited by paulhyde on 2014-9-15 03:02[/i] Research and design of reversing radar system (report + code)....; huang020202 Electronics Design Contest

Bluetooth development issues on ASUS PDA: I started using the in the hand class library to develop. It worked on the knockoff phone, but it didn't work on the ASUS MyPal 632N. I couldn't find the Bluetooth device. Later, I tried using two Blu...; bg7jw Embedded System

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components