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RD01MUS1-T113

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size389KB,7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
Download Datasheet Parametric View All

RD01MUS1-T113 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

RD01MUS1-T113 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.6 W
surface mountYES
Base Number Matches1
< Silicon RF Power MOS FET (Discrete)
>
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
OUTLINE DRAWING
4.4+/-0.1
TYPE NAME
1.6+/-0.1
LOT No.
1
0.
φ
1.5+/-0.1
FEATURES
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
3
1.5+/-0.1
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
(Tc=25°C UNLESS OTHERWISE NOTED)
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
Junction to case
RATINGS
30
+/-10
3.6
100
600
150
-40 to +125
34.5
UNIT
V
V
W
mW
mA
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
Vth
Pout
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
MIN
-
-
1.3
0.8
50
LIMITS
TYP
-
-
1.8
1.4
65
UNIT
MAX
50
1
2.3
-
-
uA
uA
V
W
%
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=30mW
f=520MHz,Idq=100mA
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct.2011
1
3.9+/-0.3
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
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