A Product Line of
Diodes Incorporated
ZXTC2061E6
12V, SOT23-6, complementary medium power transistors
Summary
BV
CEO
> 12 (-12)V
h
FE
> 500
I
C(cont)
= 5 (-3.5)A
V
CE(sat)
< 40 (-70)mV @ 1A
R
CE(sat)
= 25 (45)m
P
D
= 1.1W
Description
Advanced process capability has been used to
achieve this high performance device.
Combining NPN and PNP transistors in the
SOT23-6 package provides a compact solution
for the intended applications.
C1
C2
B1
B2
E1
Features
•
•
•
•
NPN-PNP combination
Very low saturation voltage
High gain
SOT23-6 package
E2
Applications
•
•
MOSFET and IGBT gate driving
Motor drive
Ordering information
DEVICE
ZXTC2061E6TA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
C1
B1
C2
Top view
E1
B2
E2
Device marking
2061
Issue 2 - October 2008
© Diodes Incorporated 2008
1
www.zetex.com
www.diodes.com
ZXTC2061E6
Absolute maximum and thermal ratings
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(c)(f)
Peak pulse current
Base current
Power dissipation at T
A
=25°C
(a)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(b)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(b)(g)
Linear derating factor
Power dissipation at T
A
=25°C
(c)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(d)(f)
Linear derating factor
Operating and storage temperature range
Thermal resistance junction to ambient
(a)(f)
Thermal resistance junction to ambient
(b)(f)
Thermal resistance junction to ambient
(b)(g)
Thermal resistance junction to ambient
(c)(f)
Thermal resistance junction to ambient
(d)(f)
T
j
, T
stg
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
P
D
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
Limit
20(-12)
12(-12)
7(-7)
5(-3.5)
12(-10)
1(-1)
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
-55 to +150
179
139
113
113
73
Unit
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.
Issue 2 - October 2008
© Diodes Incorporated 2008
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www.diodes.com
ZXTC2061E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
(base open)
Emitter-base
breakdown voltage
Collector-base cut-off
current
Emitter-base cut-off
current
Collector-emitter
saturation voltage
Symbol
BV
CBO
BV
CEO
Min.
20(-12)
(-)12
Typ.
40(-35)
17(-25)
Max.
Unit Conditions
V
I
C
= (-)10 A
V
I
C
= (-)10mA
(*)
BV
EBO
I
CBO
I
EBO
V
CE(sat)
(-)7
(-)8.4
<1
<1
32(-55)
50(-170)
65(-220)
(-150)
145
(-)50
(-)0.5
(-)50
40(-70)
60(-265)
80(-360)
(-200)
180
(-1050)
1000
(-900)
900
V
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
mV
mV
I
E
= (-)100 A
V
CB
=20(-12)V
V
CB
=20(-12)V, T
amb
= 100°C
V
EB
= (-)5.6V
I
C
= (-)1A, I
B
= (-)100mA
(*)
I
C
= (-)1A, I
B
= (-)10mA
(*)
I
C
= (-)2A, I
B
= (-)40mA
(*)
(I
C
= -3.5A, I
B
= -350mA)
(*)
I
C
= 5A, I
B
= 100mA
(*)
(I
C
= -3.5A, I
B
= -350mA
(*)
)
I
C
= 5A, I
B
= 100mA
(*)
(I
C
= -3.5A, V
CE
= -2V
(*)
)
I
C
= 5A, V
CE
= 2V
(*)
I
C
= (-)10mA, V
CE
= (-)2V
(*)
I
C
= (-)1A, V
CE
= (-)2V
(*)
(I
C
= -3.5A, V
CE
= -2V
(*)
)
I
C
= 5A, V
CE
= 2V
(*)
Base-emitter
saturation voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
(-955)
920
(-830)
810
480(290) 750(450)
(75)
260
(100)
390
260
(310)
26(17)
71(41)
70(62)
233(179)
72(65)
500(500) 800(800)
1500(1500)
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
MHz I
C
= (-)50mA, V
CE
= (-)10V
f = 100MHz
35(25)
pF
ns
ns
ns
ns
V
CC
= (-)10V. I
C
= (-)1A,
I
B1
= -I
B2
= (-)10mA.
V
CB
= (-)10V, f = 1MHz
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
( ) = PNP
Issue 2 - October 2008
© Diodes Incorporated 2008
4
www.zetex.com
www.diodes.com
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