Ordering number : ENN7479
12A01S
PNP Epitaxial Planar Silicon Transistor
12A01S
Low-Frequency
General-Purpose Amplifier Applications
Applications
•
Package Dimensions
unit : mm
2106A
[12A01S]
0.3
0.4 0.8 0.4
1.6
Low-frequency Amplifier, muting circuit.
Features
•
•
•
0.5 0.5
1.6
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass-epoxy board (20!30!1.6mm)
Conditions
Ratings
--15
--12
--5
--500
--1.0
200
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=--12V, IE=0
VEB=-
-4V, IC=0
VCE=--2V, IC=--10mA
VCE=--2V, IC=--50mA
300
490
Conditions
Ratings
min
typ
max
--0.1
--0.1
700
MHz
Unit
µA
µA
Marking : XP
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2203 TS IM TA-100567 No.7479-1/4
0.1max
•
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.75
0.6
0 to 0.1
3
1
2
0.2
0.1
Continued on next page.
12A01S
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=--10V, f=1MHz
IC=-
-200mA, IB=-
-10mA
IC=-
-200mA, IB=-
-10mA
IC=-
-10µA, IE=0
IC=-
-1mA, RBE=∞
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--15
--12
--5
30
57
30
Ratings
min
typ
4
--150
--0.9
--300
--1.2
max
Unit
pF
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
RL
+
470µF
VCC= --5V
+
220µF
VBE=5V
IC=20IB1= --20IB2= --400mA
--1.0m
--0.9m
A
A
--200
--180
IC -- VCE
m
--0.8
A
--0.7mA
--600
IC -- VBE
VCE= --2V
--0.6mA
Collector Current, IC -- mA
Collector Current, IC -- mA
--160
--140
--120
--100
--80
--60
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--500
--400
--300
--40
--20
0
0
--100
IB=0
--0.5
--1.0
--1.5
--2.0
IT05201
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT05202
Collector-to-Emitter Voltage, VCE -- V
1000
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
--1000
7
VCE(sat) -- IC
Ta=
7
--0.1mA
5
°
C
25
°
C
--25
°
C
--200
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta=75
°
C
25
°C
VCE= --2V
IC / IB=20
5
3
2
DC Current Gain, hFE
--25°C
3
--100
7
5
3
2
2
2
5
°
C
C
5
°
=7
Ta
C
5
°
--2
100
7
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000
IT05203
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000
IT05204
No.7479-2/4
12A01S
--1000
7
VCE(sat) -- IC
IC / IB=50
--10
7
VBE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
5
3
2
--100
7
5
3
2
°
C
25
5
°
C
=7
Ta
5
°
C
--2
25
°C
--1.0
7
5
3
2
Ta= --25°C
75
°C
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5
3
5 7--1000
IT05205
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
1000
5 7--1000
IT05206
Cob -- VCB
f=1MHz
fT -- IC
VCE= --2V
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
7
2
5
10
7
5
3
2
3
2
1.0
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector-to-Base Voltage, VCB -- V
10
7
5
IT05207
250
Collector Current, IC -- mA
5 7--1000
IT05208
Ron -- IB
IN
PC -- Ta
f=1MHz
1kΩ
1kΩ
IB
OUT
Collector Dissipation, PC -- mW
200
ON-resistance, Ron --
Ω
M
3
2
ou
n
ted
on
150
ag
las
s
1.0
7
5
3
2
-e
po
100
xy
b
oa
r
d(
2
0
!
30
50
!
1
.6m
m
)
140
160
0.1
--0.1
0
2
3
5
7
--1.0
2
3
5
Base Current, IB -- mA
--10
IT06068
7
0
20
40
60
80
100
120
Ambient Temperature, Ta --
°C
IT05209
No.7479-3/4
12A01S
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.7479-4/4
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
