2SK4137 datasheet, PDF - EEWORLD Datasheet

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2SK4137: DescriptionPower Field-Effect Transistor, 9.5A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size54KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK4137 Overview

Power Field-Effect Transistor, 9.5A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN

2SK4137 Parametric

Parameter Name	Attribute value
Objectid	1805639009
package instruction	SMALL OUTLINE, R-PSSO-F2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	56 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	9.5 A
Maximum drain current (ID)	9.5 A
Maximum drain-source on-resistance	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	80 W
Maximum pulsed drain current (IDM)	38 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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Ordering number : ENA1019

2SK4137

SANYO Semiconductors

DATA SHEET

N-Channel Silicon MOSFET

2SK4137

Features

•

General-Purpose Switching Device

Applications

Low ON-resistance, low input capacitance, ultrahigh-speed switching.

Adoption of high reliability HVP process.

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single pulse) *2

Avalanche Current *3

Symbol

VDSS

VGSS

IDP

Tch

Tstg

EAS

IAV

PW≤10μs, duty cycle≤1%

Tc=25°C (SANYO’s ideal heat dissipation condition*1)

Conditions

Ratings

500

±30

9.5

150

--55 to +150

9.5

Unit

°C

SANYO’s condition is radiation from backside.

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

VDD=99V, L=1mH, IAV=9.5A

L≤1mH, single pulse

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Symbol

V(BR)DSS

IDSS

IGSS

Conditions

ID=10mA, VGS=0V

VDS=400V, VGS=0V

VGS=±30V, VDS=0V

Ratings

min

500

100

±100

typ

max

Unit

Marking: K4137

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer' s products or

equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10908QB TI IM TC-00001083 No. A1019-1/4

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