Ordering number : EN8952
MCH6544
SANYO Semiconductors
DATA SHEET
MCH6544
Applications
•
NPN Epitaxial Planar Silicon Transistor
Inverter Circuit / Driver Applications
Relay drivers, lamp drivers, motor drivers.
Features
•
•
Composite type with an NPN transistor contained in one package facilitating high-density mounting.
Ultrasmall package facilitates miniaturization in end products.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
When mounted on ceramic substrate (600mm
✕0.8mm)
1unit
2
Conditions
Ratings
60
50
5
500
1.5
0.5
0.55
150
--55 to +150
Unit
V
V
V
mA
A
W
W
°C
°C
When mounted on ceramic substrate (600mm
✕0.8mm)
2
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
300
500
2.8
Conditions
Ratings
min
typ
max
100
100
800
MHz
pF
Unit
nA
nA
Marking : ES
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408EA TI IM TC-00001383 No.8952-1/4
MCH6544
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turm-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
60
50
5
30
340
55
Ratings
min
typ
50
0.9
max
100
1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7022A-011
Electrical Connection
6
5
4
0.25
2.0
6
5
4
0.15
2.1
1.6
0 to 0.02
1
2
3
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
Top view
0.25
1
0.65
2
3
0.3
0.85
1
2
3
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
SANYO : MCPH6
0.07
6
5
4
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=25V
RB
RL
IC=20IB1= --20IB2=200mA
No.8952-2/4
MCH6544
500
IC -- VCE
A 1
5mA
7mA
600
IC -- VBE
VCE=2V
450
Collector Current, IC -- mA
30mA
350
300
250
200
150
100
50
0
0
3mA
Collector Current, IC -- mA
20m
400
A
10m
8mA
5mA
500
400
2mA
1mA
600μA
300
200
200
μ
A
IB=0
μ
A
100
200
300
400
500
600
700
800
900
1000
100
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT05107
Collector-to-Emitter Voltage, VCE -- mV
1000
7
5
3
2
IT05106
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta=75
°
C
25
°
C
--25
°
C
Ta=7
5
°
C
25
°
C
--25
°
C
IC / IB=10
2
3
5 7 10
2
3
VCE=2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
DC Current Gain, hFE
100
5
3
2
100
7
5
3
2
10
7
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05108
5
1.0
--2
5 7 100
5
°
C
25
°
C
Ta
=7
5
°
C
2
7
3
5 7 1000
IT05411
Collector Current, IC -- mA
3
VCE(sat) -- IC
Collector Current, IC -- mA
1000
7
VCE(sat) -- IC
IC / IB=20
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
5
3
2
100
7
5
Ta
=7
5
°
C
5
°
C
2
3
2
C
5
°
100
7
5
3
2
25
°
C
C
5
°
=7
C
Ta
5
°
--2
--2
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05109
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05110
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
10
Cob -- VCB
f=1MHz
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
Output Capacitance, Cob -- pF
2
3
5 7 1000
IT05111
5
7
5
1.0
7
5
3
2
25
°
C
Ta=
--25
°
C
3
75
°
C
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
1.0
1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
Collector-to-Base Voltage, VCB -- V
IT05112
No.8952-3/4
MCH6544
1000
fT -- IC
VCE=10V
Gain-Bandwidth Product, fT -- MHz
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Ron -- IB
f=1MHz
1kΩ
IN
1kΩ
IB
OUT
7
5
3
2
100
1.0
ON Resistance, Ron --
Ω
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05113
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
0.6
PD -- Ta
Base Current, IB -- mA
7
10
IT06092
Allowable Power Dissipation, PD -- W
0.55
0.5
When mounted on ceramic substrate
(600mm
2
✕0.8mm)
0.4
To
t
al
t
0.3
di
1u
ni
ss
ip
at
io
n
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT10744
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No.8952-4/4
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