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EC3H02BA

Description
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size46KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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EC3H02BA Overview

NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

EC3H02BA Parametric

Parameter NameAttribute value
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.07 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz
Base Number Matches1
Ordering number : ENA1064A
EC3H02BA
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC3H02BA
Features
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Low noise : NF=1.0dB typ (f=1GHz).
High gain :
⏐S21e⏐
2
=12dB typ (f=1GHz).
High cutoff frequency : fT=7GHz typ.
Ultrasmall (1006size), slim (0.5mm) leadless package.
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
2
70
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT1
Cob
Cre
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
120
5
7
0.7
0.45
1.2
Ratings
min
typ
max
1.0
10
180
GHz
pF
pF
Unit
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70908 TI IM TC-00001504 / 42308AB TI IM TC-00001344 No. A1064-1/5

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