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M58WR128EB70ZB6T

Description
Flash, 8MX16, 70ns, PBGA60, 12.50 X 12 MM, 0.75 MM PITCH, VFBGA-60
Categorystorage    storage   
File Size1MB,87 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58WR128EB70ZB6T Overview

Flash, 8MX16, 70ns, PBGA60, 12.50 X 12 MM, 0.75 MM PITCH, VFBGA-60

M58WR128EB70ZB6T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionVFBGA,
Contacts60
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
JESD-30 codeR-PBGA-B60
JESD-609 codee0
length12.5 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals60
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
typeNOR TYPE
width12 mm
Base Number Matches1
M58WR128ET
M58WR128EB
128 Mbit (8Mb x 16, Multiple Bank, Burst)
1.8V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2.2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
s
Figure 1. Package
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100ns
FBGA
s
s
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
VFBGA60 (ZB)
12.5 x 12mm
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR128ET: 881Eh
– Bottom Device Code, M58WR128EB: 881Fh
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
s
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
May 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
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