EEWORLDEEWORLDEEWORLD

Part Number

Search

HYB25D256160BT-7F

Description
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66
Categorystorage    storage   
File Size3MB,83 Pages
ManufacturerQIMONDA
Download Datasheet Parametric View All

HYB25D256160BT-7F Overview

DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66

HYB25D256160BT-7F Parametric

Parameter NameAttribute value
package instructionTSSOP, TSSOP66,.46
Reach Compliance Codeunknown
Maximum access time0.75 ns
Maximum clock frequency (fCLK)143 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width16
Number of terminals66
word count16777216 words
character code16000000
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length2,4,8
Maximum standby current0.008 A
Maximum slew rate0.235 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL
Base Number Matches1
Data Sheet, Rev. 1.21, Jul. 2004
HYB25D256400B[T/C](L)
HYB25D256800B[T/C](L)
HYB25D256160B[T/C](L)
256 Mbit Double Data Rate SDRAM
DDR SDRAM
Memory Products
N e v e r
s t o p
t h i n k i n g .

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2277  1549  1761  203  964  46  32  36  5  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号