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KMM377S3320T1-G8

Description
Synchronous DRAM Module, 32MX72, 6ns, CMOS, GLASS EPOXY, DIMM-168
Categorystorage    storage   
File Size232KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KMM377S3320T1-G8 Overview

Synchronous DRAM Module, 32MX72, 6ns, CMOS, GLASS EPOXY, DIMM-168

KMM377S3320T1-G8 Parametric

Parameter NameAttribute value
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density2415919104 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports2
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.02 A
Maximum slew rate3.6 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
SDRAM MODULE
Revision History
Revision 3 (May 1998)
- CLK Input Cap. is added by PLL Input Cap. (27pF)
Revision 4 (July 1998)
- "REGE" description is changed.
Revision 5 (November 1998)
- Corrected DQ# at the input of SDRAM(D5) as DQ16~19
@Functional Block Diagram
Preliminary
KMM377S3320T1
REV. 5 Nov. 1998

KMM377S3320T1-G8 Related Products

KMM377S3320T1-G8 KMM377S3320T1-GL KMM377S3320T1-GH
Description Synchronous DRAM Module, 32MX72, 6ns, CMOS, GLASS EPOXY, DIMM-168 Synchronous DRAM Module, 32MX72, 6ns, CMOS, GLASS EPOXY, DIMM-168 Synchronous DRAM Module, 32MX72, 6ns, CMOS, GLASS EPOXY, DIMM-168
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns 6 ns
Maximum clock frequency (fCLK) 125 MHz 100 MHz 100 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 2415919104 bit 2415919104 bit 2415919104 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 72
Number of functions 1 1 1
Number of ports 2 2 2
Number of terminals 168 168 168
word count 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 32MX72 32MX72 32MX72
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
Maximum standby current 0.02 A 0.02 A 0.02 A
Maximum slew rate 3.6 mA 3.6 mA 3.6 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Base Number Matches 1 1 1
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