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RN2906FS(TPL3)

Description
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
CategoryDiscrete semiconductor    The transistor   
File Size171KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN2906FS(TPL3) Overview

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP

RN2906FS(TPL3) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)120
Number of components2
Polarity/channel typePNP
Maximum power dissipation(Abs)0.05 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
RN2901FS~RN2906FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2901FS,RN2902FS,RN2903FS
RN2904FS,RN2905FS,RN2906FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
0.7±0.05
0.35 0.35
1
2
3
6
5
4
0.1±0.05
Complementary to RN1901FS~RN1906FS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2901FS
RN2902FS
R2
RN2903FS
RN2904FS
E
RN2905FS
RN2906FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
fS6
JEDEC
JEITA
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
2-1F1D
TOSHIBA
Weight: 0.001g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2901FS~2906FS
RN2901FS~2906FS
RN2901FS~2904FS
RN2905FS, 2906FS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−20
−20
−10
−5
−50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1
2
3
Q1
Q2
Equivalent Circuit
(top view)
6
5
4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
0.15±0.05
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
0.1±0.05
0.8±0.05
0.1±0.05

RN2906FS(TPL3) Related Products

RN2906FS(TPL3) RN2904FS(TPL3) RN2905FS(TPL3)
Description PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Minimum DC current gain (hFE) 120 120 120
Number of components 2 2 2
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.05 W 0.05 W 0.05 W
surface mount YES YES YES
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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